Dual N-Channel MOSFET, 280 mA, 60 V, 6-Pin SOT-563F onsemi 2N7002V
Product Information
Maximum Drain Source Voltage:
60 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
250 mW
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
0.6mm
Width:
1.2mm
Length:
1.7mm
Minimum Gate Threshold Voltage:
1V
Package Type:
SOT-563
Number of Elements per Chip:
2
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
280 mA
Transistor Material:
Si
Maximum Drain Source Resistance:
13.5 Ω
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
Isolated
FET Feature:
Logic Level Gate
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SOT-563, SOT-666
Rds On (Max) @ Id, Vgs:
7.5Ohm @ 50mA, 5V
Gate Charge (Qg) (Max) @ Vgs:
-
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
Current - Continuous Drain (Id) @ 25°C:
280mA
Configuration:
2 N-Channel (Dual)
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
60V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
50pF @ 25V
standardLeadTime:
10 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SOT-563F
Power - Max:
250mW
Technology:
MOSFET (Metal Oxide)
Base Product Number:
2N7002
ECCN:
EAR99
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This is Dual N-Channel MOSFET 280 mA 60 V 6-Pin SOT-563F manufactured by onsemi. The manufacturer part number is 2N7002V. It has a maximum of 60 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 250 mw maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 0.6mm. Furthermore, the product is 1.2mm wide. Its accurate length is 1.7mm. Whereas its minimum gate threshold voltage includes 1v. The package is a sort of sot-563. It consists of 2 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 280 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 13.5 ω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 6 pins. The product offers isolated transistor configuration. The FET features of the product include logic level gate. It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 2.5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in sot-563, sot-666. It has a maximum Rds On and voltage of 7.5ohm @ 50ma, 5v. The product is rohs3 compliant. In addition, it is reach unaffected. The continuous current drain at 25°C is 280ma. The product is available in 2 n-channel (dual) configuration. It is shipped in tape & reel (tr) package . The product has a 60v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 50pf @ 25v. It has a long 10 weeks standard lead time. sot-563f is the supplier device package value. The maximum power of the product is 250mw. This product use mosfet (metal oxide) technology. Moreover, it corresponds to 2n7002, a base product number of the product. The product is designated with the ear99 code number.
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