Automotive Standard:
No
Maximum Power Dissipation Pd:
2W
Product Type:
Power MOSFET
Maximum Drain Source Voltage Vds:
30V
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
20 V
Maximum Drain Source Resistance Rds:
190mΩ
Height:
1.5mm
Width:
4 mm
Length:
5mm
Package Type:
SOIC
Number of Elements per Chip:
2
Minimum Operating Temperature:
150°C
Transistor Configuration:
Isolated
Standards/Approvals:
No
Maximum Continuous Drain Current Id:
3.9A
Channel Type:
Type N, Type P
Maximum Operating Temperature:
-55°C
Pin Count:
8
Mount Type:
Surface
FET Feature:
-
HTSUS:
8541.21.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs:
65mOhm @ 3.9A, 10V
Gate Charge (Qg) (Max) @ Vgs:
15nC @ 10V
Vgs(th) (Max) @ Id:
3V @ 250µA
REACH Status:
REACH Unaffected
Current - Continuous Drain (Id) @ 25°C:
3.9A, 3.5A
Configuration:
N and P-Channel
Manufacturer:
onsemi
Drain to Source Voltage (Vdss):
30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
16 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
235pF @ 10V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
8-SOIC
Packaging:
Tape & Reel (TR)
Power - Max:
900mW
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SI4532
ECCN:
EAR99
