Maximum Drain Source Voltage:
60 V
Typical Gate Charge @ Vgs:
22 nC @ 10 V dc
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.1 W
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
4V
Height:
1.65mm
Width:
3.7mm
Length:
6.7mm
Maximum Drain Source Resistance:
110 mΩ
Package Type:
SOT-223
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
3 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-261-4, TO-261AA
Rds On (Max) @ Id, Vgs:
110mOhm @ 1.5A, 10V
Gate Charge (Qg) (Max) @ Vgs:
22 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
NTF3055-100T1G Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/920217
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
1.3W (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
455 pF @ 25 V
standardLeadTime:
13 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SOT-223 (TO-261)
Current - Continuous Drain (Id) @ 25°C:
3A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NTF3055
ECCN:
EAR99
This is N-Channel MOSFET 3 A 60 V 3 + Tab-Pin SOT-223 ON Semiconductor manufactured by onsemi. The manufacturer part number is NTF3055-100T1G. It has a maximum of 60 v drain source voltage. With a typical gate charge at Vgs includes 22 nc @ 10 v dc. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 2.1 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. The product carries 4v of maximum gate threshold voltage. In addition, the height is 1.65mm. Furthermore, the product is 3.7mm wide. Its accurate length is 6.7mm. It provides up to 110 mω maximum drain source resistance. The package is a sort of sot-223. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 3 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-261-4, to-261aa. It has a maximum Rds On and voltage of 110mohm @ 1.5a, 10v. The maximum gate charge and given voltages include 22 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tape & reel (tr) package . The product has a 60 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 1.3w (ta). The product's input capacitance at maximum includes 455 pf @ 25 v. It has a long 13 weeks standard lead time. sot-223 (to-261) is the supplier device package value. The continuous current drain at 25°C is 3a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ntf3055, a base product number of the product. The product is designated with the ear99 code number.
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