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N-Channel MOSFET, 2.8 A, 20 V, 3-Pin SOT-23 ON Semiconductor MGSF2N02ELT1G

MGSF2N02ELT1G N-Channel MOSFET, 2.8 A, 20 V, 3-Pin SOT-23 ON Semiconductor
MGSF2N02ELT1G
MGSF2N02ELT1G
onsemi

Product Information

Maximum Drain Source Voltage:
20 V
Typical Gate Charge @ Vgs:
0.6 nC @ 4 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.25 W
Maximum Gate Source Voltage:
-8 V, +8 V
Maximum Gate Threshold Voltage:
1V
Height:
1.01mm
Width:
1.4mm
Length:
3.04mm
Maximum Drain Source Resistance:
115 mΩ
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
2.8 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
1V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Rds On (Max) @ Id, Vgs:
85mOhm @ 3.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs:
3.5 nC @ 4 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
MGSF2N02ELT1G Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
edacadModelUrl:
/en/models/1749004
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
20 V
Vgs (Max):
±8V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
1.25W (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
150 pF @ 5 V
standardLeadTime:
32 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SOT-23-3 (TO-236)
Current - Continuous Drain (Id) @ 25°C:
2.8A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
MGSF2
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is N-Channel MOSFET 2.8 A 20 V 3-Pin SOT-23 ON Semiconductor manufactured by onsemi. The manufacturer part number is MGSF2N02ELT1G. It has a maximum of 20 v drain source voltage. With a typical gate charge at Vgs includes 0.6 nc @ 4 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 1.25 w maximum power dissipation. It features a maximum gate source voltage of -8 v, +8 v. The product carries 1v of maximum gate threshold voltage. In addition, the height is 1.01mm. Furthermore, the product is 1.4mm wide. Its accurate length is 3.04mm. It provides up to 115 mω maximum drain source resistance. The package is a sort of sot-23. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 2.8 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 1v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-236-3, sc-59, sot-23-3. It has a maximum Rds On and voltage of 85mohm @ 3.6a, 4.5v. The maximum gate charge and given voltages include 3.5 nc @ 4 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 2.5v, 4.5v. It is shipped in tape & reel (tr) package . The product has a 20 v drain to source voltage. The maximum Vgs rate is ±8v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 1.25w (ta). The product's input capacitance at maximum includes 150 pf @ 5 v. It has a long 32 weeks standard lead time. sot-23-3 (to-236) is the supplier device package value. The continuous current drain at 25°C is 2.8a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to mgsf2, a base product number of the product. The product is designated with the ear99 code number.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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onsemi RoHS(Environmental Information)
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Mold Compound 07/Sep/2019(PCN Assembly/Origin)
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SOT-23 Pkgs MOSFETS Copper to Gold Wire 8/Dec/2015(PCN Design/Specification)
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SOT23 16/Sep/2016(PCN Design/Specification)
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MGSF2N02EL, MVSF2N02EL(Datasheets)

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You will get a confirmation email regarding your order of N-Channel MOSFET, 2.8 A, 20 V, 3-Pin SOT-23 ON Semiconductor MGSF2N02ELT1G. You can also check on our website or by contacting our customer support team for further order details on N-Channel MOSFET, 2.8 A, 20 V, 3-Pin SOT-23 ON Semiconductor MGSF2N02ELT1G.
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