Priced to Clear:
Yes
Maximum Drain Source Voltage:
20 V
Typical Gate Charge @ Vgs:
4.7 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.2 W
Maximum Gate Source Voltage:
-10 V, +10 V
Maximum Gate Threshold Voltage:
1.3V
Height:
0.75mm
Width:
1.7mm
Length:
2mm
Maximum Drain Source Resistance:
115 mΩ
Package Type:
EMH
Number of Elements per Chip:
2
Maximum Continuous Drain Current:
3 A, 4 A
Transistor Material:
Si
Channel Type:
N, P
Maximum Operating Temperature:
+150 °C
Pin Count:
8
Transistor Configuration:
Isolated
FET Feature:
Logic Level Gate
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
-
Operating Temperature:
150°C (TJ)
Package / Case:
8-SMD, Flat Leads
Rds On (Max) @ Id, Vgs:
45mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs:
4.7nC @ 4.5V
REACH Status:
REACH Unaffected
edacadModel:
EMH2604-TL-H Models
Current - Continuous Drain (Id) @ 25°C:
4A, 3A
edacadModelUrl:
/en/models/2748170
Configuration:
N and P-Channel
Manufacturer:
onsemi
Drain to Source Voltage (Vdss):
20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
345pF @ 10V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
8-EMH
Packaging:
Tape & Reel (TR)
Power - Max:
1.2W
Technology:
MOSFET (Metal Oxide)
Base Product Number:
EMH2604
ECCN:
EAR99
This is Dual N/P-Channel MOSFET 3 A 4 A 20 V 8-Pin EMH ON Semiconductor manufactured by onsemi. The manufacturer part number is EMH2604-TL-H. Priced to Clear Options - yes. It has a maximum of 20 v drain source voltage. With a typical gate charge at Vgs includes 4.7 nc @ 4.5 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 1.2 w maximum power dissipation. It features a maximum gate source voltage of -10 v, +10 v. The product carries 1.3v of maximum gate threshold voltage. In addition, the height is 0.75mm. Furthermore, the product is 1.7mm wide. Its accurate length is 2mm. It provides up to 115 mω maximum drain source resistance. The package is a sort of emh. It consists of 2 elements per chip. While 3 a, 4 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 8 pins. The product offers isolated transistor configuration. The FET features of the product include logic level gate. It is assigned with possible HTSUS value of 8541.29.0095. The product has 150°c (tj) operating temperature range. Moreover, the product comes in 8-smd, flat leads. It has a maximum Rds On and voltage of 45mohm @ 4a, 4.5v. The maximum gate charge and given voltages include 4.7nc @ 4.5v. In addition, it is reach unaffected. The continuous current drain at 25°C is 4a, 3a. The product is available in n and p-channel configuration. The onsemi's product offers user-desired applications. The product has a 20v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 345pf @ 10v. 8-emh is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The maximum power of the product is 1.2w. This product use mosfet (metal oxide) technology. Moreover, it corresponds to emh2604, a base product number of the product. The product is designated with the ear99 code number.
Reviews
Don’t hesitate to ask questions for better clarification.