Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
11.8 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.3 W
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
2.6V
Height:
0.9mm
Width:
2.3mm
Length:
2.9mm
Maximum Drain Source Resistance:
24 mΩ, 39 mΩ
Package Type:
ECH
Number of Elements per Chip:
2
Maximum Continuous Drain Current:
5.5 A, 7 A
Transistor Material:
Si
Channel Type:
N, P
Maximum Operating Temperature:
+150 °C
Pin Count:
8
Transistor Configuration:
Isolated
FET Feature:
Logic Level Gate
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
-
Operating Temperature:
150°C (TJ)
Package / Case:
8-SMD, Flat Lead
Rds On (Max) @ Id, Vgs:
24mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs:
11.8nC @ 10V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
ECH8661-TL-H Models
Current - Continuous Drain (Id) @ 25°C:
7A, 5.5A
edacadModelUrl:
/en/models/2748154
Configuration:
N and P-Channel
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
710pF @ 10V
standardLeadTime:
23 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
8-ECH
Power - Max:
1.5W
Technology:
MOSFET (Metal Oxide)
Base Product Number:
ECH8661
ECCN:
EAR99
This is Dual N/P-Channel MOSFET 5.5 A 7 A 30 V 8-Pin ECH ON Semiconductor manufactured by onsemi. The manufacturer part number is ECH8661-TL-H. It has a maximum of 30 v drain source voltage. With a typical gate charge at Vgs includes 11.8 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 1.3 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. The product carries 2.6v of maximum gate threshold voltage. In addition, the height is 0.9mm. Furthermore, the product is 2.3mm wide. Its accurate length is 2.9mm. It provides up to 24 mω, 39 mω maximum drain source resistance. The package is a sort of ech. It consists of 2 elements per chip. While 5.5 a, 7 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 8 pins. The product offers isolated transistor configuration. The FET features of the product include logic level gate. It is assigned with possible HTSUS value of 8541.29.0095. The product has 150°c (tj) operating temperature range. Moreover, the product comes in 8-smd, flat lead. It has a maximum Rds On and voltage of 24mohm @ 3.5a, 10v. The maximum gate charge and given voltages include 11.8nc @ 10v. The product is rohs3 compliant. In addition, it is reach unaffected. The continuous current drain at 25°C is 7a, 5.5a. The product is available in n and p-channel configuration. It is shipped in tape & reel (tr) package . The product has a 30v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 710pf @ 10v. It has a long 23 weeks standard lead time. 8-ech is the supplier device package value. The maximum power of the product is 1.5w. This product use mosfet (metal oxide) technology. Moreover, it corresponds to ech8661, a base product number of the product. The product is designated with the ear99 code number.
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