N-Channel MOSFET, 320 mA, 60 V, 3-Pin SOT-23 onsemi 2V7002KT1G
Product Information
Maximum Drain Source Voltage:
60 V
Typical Gate Charge @ Vgs:
0.7 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
420 mW
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
2.3V
Height:
1.01mm
Width:
1.4mm
Length:
3.04mm
Maximum Drain Source Resistance:
2.5 Ω
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
320 mA
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.21.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Rds On (Max) @ Id, Vgs:
1.6Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs:
0.7 nC @ 4.5 V
Vgs(th) (Max) @ Id:
2.3V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
2V7002KT1G Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
edacadModelUrl:
/en/models/3062037
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
300mW (Tj)
Input Capacitance (Ciss) (Max) @ Vds:
24.5 pF @ 20 V
Qualification:
AEC-Q101
standardLeadTime:
9 Weeks
Mounting Type:
Surface Mount
Grade:
Automotive
Series:
-
Supplier Device Package:
SOT-23-3 (TO-236)
Current - Continuous Drain (Id) @ 25°C:
320mA (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
2V7002
ECCN:
EAR99
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This is N-Channel MOSFET 320 mA 60 V 3-Pin SOT-23 manufactured by onsemi. The manufacturer part number is 2V7002KT1G. It has a maximum of 60 v drain source voltage. With a typical gate charge at Vgs includes 0.7 nc @ 4.5 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 420 mw maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. The product carries 2.3v of maximum gate threshold voltage. In addition, the height is 1.01mm. Furthermore, the product is 1.4mm wide. Its accurate length is 3.04mm. It provides up to 2.5 ω maximum drain source resistance. The package is a sort of sot-23. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 320 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. It is assigned with possible HTSUS value of 8541.21.0095. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-236-3, sc-59, sot-23-3. It has a maximum Rds On and voltage of 1.6ohm @ 500ma, 10v. The maximum gate charge and given voltages include 0.7 nc @ 4.5 v. The typical Vgs (th) (max) of the product is 2.3v @ 250µa. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It is shipped in tape & reel (tr) package . The product has a 60 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 300mw (tj). The product's input capacitance at maximum includes 24.5 pf @ 20 v. It has a long 9 weeks standard lead time. The product is automotive, a grade of class. sot-23-3 (to-236) is the supplier device package value. The continuous current drain at 25°C is 320ma (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to 2v7002, a base product number of the product. The product is designated with the ear99 code number.
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