Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
10.1 nC @ 10 V, 4.8 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
350 mW
Maximum Gate Source Voltage:
-12 V, +12 V
Maximum Gate Threshold Voltage:
1.5V
Height:
0.9mm
Width:
1.35mm
Length:
2.2mm
Maximum Drain Source Resistance:
280 mΩ
Package Type:
SOT-323
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
1.3 A
Transistor Material:
Si
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.21.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SC-70, SOT-323
Rds On (Max) @ Id, Vgs:
150mOhm @ 1.2A, 10V
Gate Charge (Qg) (Max) @ Vgs:
10.1 nC @ 10 V
Vgs(th) (Max) @ Id:
1.5V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
NTS4173PT1G Models
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 10V
edacadModelUrl:
/en/models/2050560
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±12V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
290mW (Ta)
standardLeadTime:
18 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
430 pF @ 15 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SC-70-3 (SOT323)
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
1.2A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NTS4173
ECCN:
EAR99
This is P-Channel MOSFET 1.3 A 30 V 3-Pin SOT-323 ON Semiconductor manufactured by onsemi. The manufacturer part number is NTS4173PT1G. It has a maximum of 30 v drain source voltage. With a typical gate charge at Vgs includes 10.1 nc @ 10 v, 4.8 nc @ 4.5 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 350 mw maximum power dissipation. It features a maximum gate source voltage of -12 v, +12 v. The product carries 1.5v of maximum gate threshold voltage. In addition, the height is 0.9mm. Furthermore, the product is 1.35mm wide. Its accurate length is 2.2mm. It provides up to 280 mω maximum drain source resistance. The package is a sort of sot-323. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 1.3 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. It is assigned with possible HTSUS value of 8541.21.0095. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in sc-70, sot-323. It has a maximum Rds On and voltage of 150mohm @ 1.2a, 10v. The maximum gate charge and given voltages include 10.1 nc @ 10 v. The typical Vgs (th) (max) of the product is 1.5v @ 250µa. In addition, it is reach unaffected. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 2.5v, 10v. The product has a 30 v drain to source voltage. The maximum Vgs rate is ±12v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 290mw (ta). It has a long 18 weeks standard lead time. The product's input capacitance at maximum includes 430 pf @ 15 v. sc-70-3 (sot323) is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 1.2a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to nts4173, a base product number of the product. The product is designated with the ear99 code number.
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