Maximum Drain Source Voltage:
8 V
Typical Gate Charge @ Vgs:
6.4 nC @ 5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
330 mW
Maximum Gate Source Voltage:
-8 V, +8 V
Height:
0.9mm
Width:
1.35mm
Length:
2.2mm
Minimum Gate Threshold Voltage:
0.45V
Package Type:
SOT-323
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
1.5 A
Transistor Material:
Si
Maximum Drain Source Resistance:
210 mΩ
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
1V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SC-70, SOT-323
Rds On (Max) @ Id, Vgs:
100mOhm @ 1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs:
6.4 nC @ 5 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
NTS2101PT1G Models
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
edacadModelUrl:
/en/models/687099
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
8 V
Vgs (Max):
±8V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
290mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
640 pF @ 8 V
standardLeadTime:
29 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SC-70-3 (SOT323)
Current - Continuous Drain (Id) @ 25°C:
1.4A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NTS2101
ECCN:
EAR99
