N-Channel MOSFET, 11 A, 30 V, 8-Pin SOIC onsemi NTMS4816NR2G
Product Information
Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
9.2 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.04 W
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
3V
Height:
1.5mm
Width:
4mm
Length:
5mm
Maximum Drain Source Resistance:
16 mΩ
Package Type:
SOIC
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
11 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
8
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs:
10mOhm @ 9A, 10V
edacadModel:
NTMS4816NR2G Models
Gate Charge (Qg) (Max) @ Vgs:
18.3 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
edacadModelUrl:
/en/models/1793059
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
780mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
1060 pF @ 25 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
8-SOIC
Current - Continuous Drain (Id) @ 25°C:
6.8A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NTMS4816
ECCN:
EAR99
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FAQs
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of N-Channel MOSFET, 11 A, 30 V, 8-Pin SOIC onsemi NTMS4816NR2G. You can also check on our website or by contacting our customer support team for further order details on N-Channel MOSFET, 11 A, 30 V, 8-Pin SOIC onsemi NTMS4816NR2G.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET21469512 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "onsemi" products on our website by using Enrgtech's Unique Manufacturing Part Number ET21469512.
Yes. We ship NTMS4816NR2G Internationally to many countries around the world.
This is N-Channel MOSFET 11 A 30 V 8-Pin SOIC manufactured by onsemi. The manufacturer part number is NTMS4816NR2G. It has a maximum of 30 v drain source voltage. With a typical gate charge at Vgs includes 9.2 nc @ 4.5 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 2.04 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. The product carries 3v of maximum gate threshold voltage. In addition, the height is 1.5mm. Furthermore, the product is 4mm wide. Its accurate length is 5mm. It provides up to 16 mω maximum drain source resistance. The package is a sort of soic. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 11 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 8 pins. The product offers single transistor configuration. It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 3v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-soic (0.154", 3.90mm width). It has a maximum Rds On and voltage of 10mohm @ 9a, 10v. The maximum gate charge and given voltages include 18.3 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It is shipped in tape & reel (tr) package . The product has a 30 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 780mw (ta). The product's input capacitance at maximum includes 1060 pf @ 25 v. 8-soic is the supplier device package value. The continuous current drain at 25°C is 6.8a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ntms4816, a base product number of the product. The product is designated with the ear99 code number.
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