Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
8 nC @ 10 V dc
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2 W
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
3V
Height:
1.5mm
Width:
4mm
Length:
5mm
Maximum Drain Source Resistance:
80 mΩ
Package Type:
SOIC
Number of Elements per Chip:
2
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
4 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
8
Transistor Configuration:
Isolated
FET Feature:
Logic Level Gate
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs:
60mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs:
16nC @ 10V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
NTMD4N03R2G Models
Current - Continuous Drain (Id) @ 25°C:
4A
edacadModelUrl:
/en/models/921585
Configuration:
2 N-Channel (Dual)
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
400pF @ 20V
standardLeadTime:
35 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
8-SOIC
Power - Max:
2W
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NTMD4
ECCN:
EAR99
This is Dual N-Channel MOSFET 4 A 30 V 8-Pin SOIC manufactured by onsemi. The manufacturer part number is NTMD4N03R2G. It has a maximum of 30 v drain source voltage. With a typical gate charge at Vgs includes 8 nc @ 10 v dc. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 2 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. The product carries 3v of maximum gate threshold voltage. In addition, the height is 1.5mm. Furthermore, the product is 4mm wide. Its accurate length is 5mm. It provides up to 80 mω maximum drain source resistance. The package is a sort of soic. It consists of 2 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 4 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 8 pins. The product offers isolated transistor configuration. The FET features of the product include logic level gate. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 3v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-soic (0.154", 3.90mm width). It has a maximum Rds On and voltage of 60mohm @ 4a, 10v. The maximum gate charge and given voltages include 16nc @ 10v. The product is rohs3 compliant. In addition, it is reach unaffected. The continuous current drain at 25°C is 4a. The product is available in 2 n-channel (dual) configuration. It is shipped in tape & reel (tr) package . The product has a 30v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 400pf @ 20v. It has a long 35 weeks standard lead time. 8-soic is the supplier device package value. The maximum power of the product is 2w. This product use mosfet (metal oxide) technology. Moreover, it corresponds to ntmd4, a base product number of the product. The product is designated with the ear99 code number.
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