Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
8 nC @ 10 V dc
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2 W
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
3V
Height:
1.5mm
Width:
4mm
Length:
5mm
Maximum Drain Source Resistance:
80 mΩ
Package Type:
SOIC
Number of Elements per Chip:
2
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
4 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
8
Transistor Configuration:
Isolated
FET Feature:
Logic Level Gate
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs:
60mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs:
16nC @ 10V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
NTMD4N03R2G Models
Current - Continuous Drain (Id) @ 25°C:
4A
edacadModelUrl:
/en/models/921585
Configuration:
2 N-Channel (Dual)
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
400pF @ 20V
standardLeadTime:
35 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
8-SOIC
Power - Max:
2W
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NTMD4
ECCN:
EAR99
