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N-Channel MOSFET, 3 A, 60 V, 3 + Tab-Pin SOT-223 ON Semiconductor NVF3055L108T1G

NVF3055L108T1G N-Channel MOSFET, 3 A, 60 V, 3 + Tab-Pin SOT-223 ON Semiconductor
NVF3055L108T1G
onsemi

Product Information

Maximum Drain Source Voltage:
60 V
Typical Gate Charge @ Vgs:
7.6 nC @ 5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.1 W
Maximum Gate Source Voltage:
-15 V, +15 V
Maximum Gate Threshold Voltage:
2V
Height:
1.65mm
Width:
3.7mm
Length:
6.7mm
Maximum Drain Source Resistance:
120 mΩ
Package Type:
SOT-223
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
3 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-261-4, TO-261AA
Rds On (Max) @ Id, Vgs:
120mOhm @ 1.5A, 5V
Gate Charge (Qg) (Max) @ Vgs:
15 nC @ 5 V
Vgs(th) (Max) @ Id:
2V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
NVF3055L108T1G Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
5V
edacadModelUrl:
/en/models/3062538
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±15V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
1.3W (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
440 pF @ 25 V
Qualification:
AEC-Q101
standardLeadTime:
13 Weeks
Mounting Type:
Surface Mount
Grade:
Automotive
Series:
-
Supplier Device Package:
SOT-223 (TO-261)
Current - Continuous Drain (Id) @ 25°C:
3A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NVF3055
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is N-Channel MOSFET 3 A 60 V 3 + Tab-Pin SOT-223 ON Semiconductor manufactured by onsemi. The manufacturer part number is NVF3055L108T1G. It has a maximum of 60 v drain source voltage. With a typical gate charge at Vgs includes 7.6 nc @ 5 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 2.1 w maximum power dissipation. It features a maximum gate source voltage of -15 v, +15 v. The product carries 2v of maximum gate threshold voltage. In addition, the height is 1.65mm. Furthermore, the product is 3.7mm wide. Its accurate length is 6.7mm. It provides up to 120 mω maximum drain source resistance. The package is a sort of sot-223. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 3 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-261-4, to-261aa. It has a maximum Rds On and voltage of 120mohm @ 1.5a, 5v. The maximum gate charge and given voltages include 15 nc @ 5 v. The typical Vgs (th) (max) of the product is 2v @ 250µa. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 5v. It is shipped in tape & reel (tr) package . The product has a 60 v drain to source voltage. The maximum Vgs rate is ±15v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 1.3w (ta). The product's input capacitance at maximum includes 440 pf @ 25 v. It has a long 13 weeks standard lead time. The product is automotive, a grade of class. sot-223 (to-261) is the supplier device package value. The continuous current drain at 25°C is 3a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to nvf3055, a base product number of the product. The product is designated with the ear99 code number.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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Wire Bond 04/Dec/2020(PCN Assembly/Origin)
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NTF3055L108, NVF3055L108(Datasheets)
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onsemi RoHS(Environmental Information)
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onsemi REACH(Environmental Information)
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Covering Tape/Material Chg 20/May/2016(PCN Packaging)

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You will get a confirmation email regarding your order of N-Channel MOSFET, 3 A, 60 V, 3 + Tab-Pin SOT-223 ON Semiconductor NVF3055L108T1G. You can also check on our website or by contacting our customer support team for further order details on N-Channel MOSFET, 3 A, 60 V, 3 + Tab-Pin SOT-223 ON Semiconductor NVF3055L108T1G.
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