Maximum Drain Source Voltage:
20 V
Typical Gate Charge @ Vgs:
15 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
8.3 W
Maximum Gate Source Voltage:
-8 V, +8 V
Maximum Gate Threshold Voltage:
1V
Height:
1.65mm
Width:
3.7mm
Length:
6.7mm
Maximum Drain Source Resistance:
70 mΩ
Package Type:
SOT-223
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
8.4 A
Transistor Material:
Si
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-261-4, TO-261AA
Rds On (Max) @ Id, Vgs:
50mOhm @ 6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs:
20 nC @ 4.5 V
Vgs(th) (Max) @ Id:
1V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
NVF6P02T3G Models
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
edacadModelUrl:
/en/models/3062541
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
20 V
Vgs (Max):
±8V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
8.3W (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
1200 pF @ 16 V
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Grade:
Automotive
Series:
-
Supplier Device Package:
SOT-223 (TO-261)
Current - Continuous Drain (Id) @ 25°C:
10A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NVF6P02
ECCN:
EAR99
This is P-Channel MOSFET 8.4 A 20 V 3 + Tab-Pin SOT-223 ON Semiconductor manufactured by onsemi. The manufacturer part number is NVF6P02T3G. It has a maximum of 20 v drain source voltage. With a typical gate charge at Vgs includes 15 nc @ 4.5 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 8.3 w maximum power dissipation. It features a maximum gate source voltage of -8 v, +8 v. The product carries 1v of maximum gate threshold voltage. In addition, the height is 1.65mm. Furthermore, the product is 3.7mm wide. Its accurate length is 6.7mm. It provides up to 70 mω maximum drain source resistance. The package is a sort of sot-223. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 8.4 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-261-4, to-261aa. It has a maximum Rds On and voltage of 50mohm @ 6a, 4.5v. The maximum gate charge and given voltages include 20 nc @ 4.5 v. The typical Vgs (th) (max) of the product is 1v @ 250µa. In addition, it is reach unaffected. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 2.5v, 4.5v. It is shipped in tape & reel (tr) package . The product has a 20 v drain to source voltage. The maximum Vgs rate is ±8v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 8.3w (ta). The product's input capacitance at maximum includes 1200 pf @ 16 v. The product is automotive, a grade of class. sot-223 (to-261) is the supplier device package value. The continuous current drain at 25°C is 10a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to nvf6p02, a base product number of the product. The product is designated with the ear99 code number.
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