Dual N-Channel MOSFET, 51 A, 100 V, 8-Pin PQFN onsemi FDMS86183
Product Information
Maximum Continuous Drain Current:
51 A
Width:
5.85mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Maximum Gate Threshold Voltage:
4V
Package Type:
PQFN8
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
15 nC @ 10 V
Channel Type:
N
Length:
5mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
63 W
Series:
PowerTrench
Maximum Gate Source Voltage:
±20 V
Height:
1.05mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.3V
Maximum Drain Source Resistance:
12.8 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 90µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN
Rds On (Max) @ Id, Vgs:
12.8mOhm @ 16A, 10V
Gate Charge (Qg) (Max) @ Vgs:
14 nC @ 6 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
FDMS86183 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
edacadModelUrl:
/en/models/7104603
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
63W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1515 pF @ 50 V
standardLeadTime:
26 Weeks
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
8-PQFN (5x6)
Current - Continuous Drain (Id) @ 25°C:
51A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDMS86
ECCN:
EAR99
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FAQs
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You can order onsemi brand products with FDMS86183 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Dual N-Channel MOSFET, 51 A, 100 V, 8-Pin PQFN onsemi FDMS86183. You can also check on our website or by contacting our customer support team for further order details on Dual N-Channel MOSFET, 51 A, 100 V, 8-Pin PQFN onsemi FDMS86183.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET21466850 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "onsemi" products on our website by using Enrgtech's Unique Manufacturing Part Number ET21466850.
Yes. We ship FDMS86183 Internationally to many countries around the world.
This is Dual N-Channel MOSFET 51 A 100 V 8-Pin PQFN manufactured by onsemi. The manufacturer part number is FDMS86183. While 51 a of maximum continuous drain current. Furthermore, the product is 5.85mm wide. The product offers single transistor configuration. It has a maximum of 100 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of pqfn8. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 15 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 5mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 63 w maximum power dissipation. The product powertrench, is a highly preferred choice for users. It features a maximum gate source voltage of ±20 v. In addition, the height is 1.05mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.3v . It provides up to 12.8 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 90µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-powertdfn. It has a maximum Rds On and voltage of 12.8mohm @ 16a, 10v. The maximum gate charge and given voltages include 14 nc @ 6 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 6v, 10v. It is shipped in tape & reel (tr) package . The product has a 100 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 63w (tc). The product's input capacitance at maximum includes 1515 pf @ 50 v. It has a long 26 weeks standard lead time. The product powertrench®, is a highly preferred choice for users. 8-pqfn (5x6) is the supplier device package value. The continuous current drain at 25°C is 51a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to fdms86, a base product number of the product. The product is designated with the ear99 code number.
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