Forward Voltage Vf:
1.2V
Width:
4 mm
Automotive Standard:
No
Typical Gate Charge Qg @ Vgs:
70nC
Package Type:
SOIC
Maximum Continuous Drain Current Id:
10A
Product Type:
MOSFET
Maximum Drain Source Resistance Rds:
0.027Ω
Maximum Operating Temperature:
150°C
Maximum Drain Source Voltage Vds:
60V
Channel Type:
Type N
Length:
5mm
Standards/Approvals:
No
Pin Count:
8
Mount Type:
Surface
Maximum Power Dissipation Pd:
2.5W
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
±20 V
Series:
PowerTrench
Height:
1.5mm
Minimum Operating Temperature:
-55°C
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs:
14mOhm @ 10A, 10V
title:
FDS5670
Vgs(th) (Max) @ Id:
4V @ 250µA
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
2.5W (Ta)
standardLeadTime:
16 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
2900 pF @ 15 V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Gate Charge (Qg) (Max) @ Vgs:
70 nC @ 10 V
Supplier Device Package:
8-SOIC
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
10A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDS56
ECCN:
EAR99
