Maximum Continuous Drain Current:
210 mA
Transistor Material:
Si
Width:
1.25mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
50 V
Package Type:
SOT-323
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.8V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
1.1 nC @ 10 V
Channel Type:
N
Length:
2mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
340 mW
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
0.9mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.4V
Maximum Drain Source Resistance:
6 Ω
FET Feature:
-
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
1.5V @ 1mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SC-70, SOT-323
Rds On (Max) @ Id, Vgs:
3.5Ohm @ 220mA, 10V
Gate Charge (Qg) (Max) @ Vgs:
1.1 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
BSS138W Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
edacadModelUrl:
/en/models/2804105
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
50 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
340mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
38 pF @ 25 V
standardLeadTime:
22 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SOT-323
Current - Continuous Drain (Id) @ 25°C:
210mA (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
BSS138
ECCN:
EAR99
