Maximum Continuous Drain Current:
950 mA
Transistor Material:
Si
Width:
1.25mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
25 V
Package Type:
SOT-363 (SC-70)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.65V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
1.64 nC @ 4.5 V
Channel Type:
N
Length:
2mm
Pin Count:
6
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
750 mW
Series:
PowerTrench
Maximum Gate Source Voltage:
-8 V, +8 V
Height:
1mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
760 mΩ
FET Feature:
-
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
6-TSSOP, SC-88, SOT-363
Rds On (Max) @ Id, Vgs:
450mOhm @ 500mA, 4.5V
edacadModel:
FDG313N Models
Gate Charge (Qg) (Max) @ Vgs:
2.3 nC @ 4.5 V
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.7V, 4.5V
edacadModelUrl:
/en/models/977987
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
25 V
Vgs (Max):
±8V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
750mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
50 pF @ 10 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SC-88 (SC-70-6)
Current - Continuous Drain (Id) @ 25°C:
950mA (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDG313
ECCN:
EAR99
This is N-Channel MOSFET 950 mA 25 V 6-Pin SOT-363 (SC-70) manufactured by onsemi. The manufacturer part number is FDG313N. While 950 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 1.25mm wide. The product offers single transistor configuration. It has a maximum of 25 v drain source voltage. The package is a sort of sot-363 (sc-70). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 0.65v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 1.64 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its accurate length is 2mm. It contains 6 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 750 mw maximum power dissipation. The product powertrench, is a highly preferred choice for users. It features a maximum gate source voltage of -8 v, +8 v. In addition, the height is 1mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 760 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 1.5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 6-tssop, sc-88, sot-363. It has a maximum Rds On and voltage of 450mohm @ 500ma, 4.5v. The maximum gate charge and given voltages include 2.3 nc @ 4.5 v. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 2.7v, 4.5v. It is shipped in tape & reel (tr) package . The product has a 25 v drain to source voltage. The maximum Vgs rate is ±8v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 750mw (ta). The product's input capacitance at maximum includes 50 pf @ 10 v. sc-88 (sc-70-6) is the supplier device package value. The continuous current drain at 25°C is 950ma (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to fdg313, a base product number of the product. The product is designated with the ear99 code number.
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