N-Channel MOSFET, 3.9 A, 800 V, 3-Pin D2PAK onsemi FQB4N80TM
Product Information
Maximum Drain Source Voltage:
800 V
Typical Gate Charge @ Vgs:
19 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
3.13 W
Series:
QFET
Maximum Gate Source Voltage:
-30 V, +30 V
Channel Type:
N
Minimum Gate Threshold Voltage:
3V
Maximum Drain Source Resistance:
3.6 Ω
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
3.9 A
Transistor Material:
Si
Height:
4.83mm
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Rds On (Max) @ Id, Vgs:
3.6Ohm @ 1.95A, 10V
Gate Charge (Qg) (Max) @ Vgs:
25 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
800 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
3.13W (Ta), 130W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
880 pF @ 25 V
Mounting Type:
Surface Mount
Series:
QFET®
Supplier Device Package:
TO-263 (D2PAK)
Current - Continuous Drain (Id) @ 25°C:
3.9A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FQB4N80
ECCN:
EAR99
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FAQs
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You can order onsemi brand products with FQB4N80TM directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of N-Channel MOSFET, 3.9 A, 800 V, 3-Pin D2PAK onsemi FQB4N80TM. You can also check on our website or by contacting our customer support team for further order details on N-Channel MOSFET, 3.9 A, 800 V, 3-Pin D2PAK onsemi FQB4N80TM.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET21466716 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "onsemi" products on our website by using Enrgtech's Unique Manufacturing Part Number ET21466716.
Yes. We ship FQB4N80TM Internationally to many countries around the world.
This is N-Channel MOSFET 3.9 A 800 V 3-Pin D2PAK manufactured by onsemi. The manufacturer part number is FQB4N80TM. It has a maximum of 800 v drain source voltage. With a typical gate charge at Vgs includes 19 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 3.13 w maximum power dissipation. The product qfet, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. The product is available in [Cannel Type] channel. Whereas its minimum gate threshold voltage includes 3v. It provides up to 3.6 ω maximum drain source resistance. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 3.9 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. In addition, the height is 4.83mm. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-263-3, d2pak (2 leads + tab), to-263ab. It has a maximum Rds On and voltage of 3.6ohm @ 1.95a, 10v. The maximum gate charge and given voltages include 25 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tape & reel (tr) package . The product has a 800 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 3.13w (ta), 130w (tc). The product's input capacitance at maximum includes 880 pf @ 25 v. The product qfet®, is a highly preferred choice for users. to-263 (d2pak) is the supplier device package value. The continuous current drain at 25°C is 3.9a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to fqb4n80, a base product number of the product. The product is designated with the ear99 code number.
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