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Dual P-Channel MOSFET, 6.9 A, 30 V, 8-Pin SOIC onsemi FDS4935BZ

FDS4935BZ Dual P-Channel MOSFET, 6.9 A, 30 V, 8-Pin SOIC onsemi
FDS4935BZ
FDS4935BZ
onsemi

Product Information

Maximum Continuous Drain Current:
6.9 A
Transistor Material:
Si
Width:
4mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
30 V
Package Type:
SOIC
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
29 nC @ 10 V
Channel Type:
P
Length:
5mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
1.6 W
Series:
PowerTrench
Maximum Gate Source Voltage:
-25 V, +25 V
Height:
1.5mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
22 mΩ
FET Feature:
Logic Level Gate
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs:
22mOhm @ 6.9A, 10V
Gate Charge (Qg) (Max) @ Vgs:
40nC @ 10V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
FDS4935BZ Models
Current - Continuous Drain (Id) @ 25°C:
6.9A
edacadModelUrl:
/en/models/1154609
Configuration:
2 P-Channel (Dual)
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
1360pF @ 15V
standardLeadTime:
40 Weeks
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
8-SOIC
Power - Max:
900mW
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDS49
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is Dual P-Channel MOSFET 6.9 A 30 V 8-Pin SOIC manufactured by onsemi. The manufacturer part number is FDS4935BZ. While 6.9 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4mm wide. The product offers isolated transistor configuration. It has a maximum of 30 v drain source voltage. The package is a sort of soic. It consists of 2 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 29 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 5mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 1.6 w maximum power dissipation. The product powertrench, is a highly preferred choice for users. It features a maximum gate source voltage of -25 v, +25 v. In addition, the height is 1.5mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 22 mω maximum drain source resistance. The FET features of the product include logic level gate. It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 3v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-soic (0.154", 3.90mm width). It has a maximum Rds On and voltage of 22mohm @ 6.9a, 10v. The maximum gate charge and given voltages include 40nc @ 10v. The product is rohs3 compliant. In addition, it is reach unaffected. The continuous current drain at 25°C is 6.9a. The product is available in 2 p-channel (dual) configuration. It is shipped in tape & reel (tr) package . The product has a 30v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 1360pf @ 15v. It has a long 40 weeks standard lead time. The product powertrench®, is a highly preferred choice for users. 8-soic is the supplier device package value. The maximum power of the product is 900mw. This product use mosfet (metal oxide) technology. Moreover, it corresponds to fds49, a base product number of the product. The product is designated with the ear99 code number.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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onsemi RoHS(Environmental Information)
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onsemi REACH(Environmental Information)
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Mult Dev Sourcing Rev 10/Dec/2018(PCN Assembly/Origin)
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Logo 17/Aug/2017(PCN Design/Specification)
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FDS4935BZ Die Revision 05/Dec/2007(PCN Design/Specification)
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Mult Devices 24/Oct/2017(PCN Packaging)
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Mult MSL1 Pkg Chg 20/Dec/2018(PCN Packaging)

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FAQs

Yes. You can also search FDS4935BZ on website for other similar products.
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You can order onsemi brand products with FDS4935BZ directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Dual P-Channel MOSFET, 6.9 A, 30 V, 8-Pin SOIC onsemi FDS4935BZ. You can also check on our website or by contacting our customer support team for further order details on Dual P-Channel MOSFET, 6.9 A, 30 V, 8-Pin SOIC onsemi FDS4935BZ.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET21466715 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "onsemi" products on our website by using Enrgtech's Unique Manufacturing Part Number ET21466715.
Yes. We ship FDS4935BZ Internationally to many countries around the world.