N-Channel MOSFET, 32 A, 200 V, 3-Pin TO-3PN onsemi FQA32N20C
Product Information
Maximum Continuous Drain Current:
32 A
Transistor Material:
Si
Width:
5mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
200 V
Package Type:
TO-3PN
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
82.5 nC @ 10 V
Channel Type:
N
Length:
15.8mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
204 W
Series:
QFET
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
18.9mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
82 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-3P-3, SC-65-3
Rds On (Max) @ Id, Vgs:
82mOhm @ 16A, 10V
Gate Charge (Qg) (Max) @ Vgs:
110 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
200 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
Not Applicable
Power Dissipation (Max):
204W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
2220 pF @ 25 V
Mounting Type:
Through Hole
Series:
QFET®
Supplier Device Package:
TO-3PN
Current - Continuous Drain (Id) @ 25°C:
32A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FQA32
ECCN:
EAR99
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This is N-Channel MOSFET 32 A 200 V 3-Pin TO-3PN manufactured by onsemi. The manufacturer part number is FQA32N20C. While 32 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 5mm wide. The product offers single transistor configuration. It has a maximum of 200 v drain source voltage. The package is a sort of to-3pn. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 82.5 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 15.8mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 204 w maximum power dissipation. The product qfet, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 18.9mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 82 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-3p-3, sc-65-3. It has a maximum Rds On and voltage of 82mohm @ 16a, 10v. The maximum gate charge and given voltages include 110 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tube package . The product has a 200 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is not applicable. The product carries maximum power dissipation 204w (tc). The product's input capacitance at maximum includes 2220 pf @ 25 v. The product qfet®, is a highly preferred choice for users. to-3pn is the supplier device package value. The continuous current drain at 25°C is 32a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to fqa32, a base product number of the product. The product is designated with the ear99 code number.
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