Forward Voltage Vf:
1.2V
Width:
4 mm
Automotive Standard:
No
Typical Gate Charge Qg @ Vgs:
43nC
Package Type:
SOIC
Maximum Continuous Drain Current Id:
11A
Product Type:
MOSFET
Maximum Drain Source Resistance Rds:
0.014Ω
Maximum Operating Temperature:
150°C
Maximum Drain Source Voltage Vds:
20V
Channel Type:
Type P
Length:
5mm
Standards/Approvals:
RoHS Compliant
Pin Count:
8
Mount Type:
Surface
Maximum Power Dissipation Pd:
2.5W
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
±12 V
Series:
PowerTrench
Height:
1.5mm
Minimum Operating Temperature:
-55°C
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs:
14mOhm @ 11A, 4.5V
Gate Charge (Qg) (Max) @ Vgs:
60 nC @ 4.5 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
20 V
Vgs (Max):
±12V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
2.5W (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
4044 pF @ 10 V
standardLeadTime:
8 Weeks
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
8-SOIC
Current - Continuous Drain (Id) @ 25°C:
11A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDS65
ECCN:
EAR99
