Maximum Continuous Drain Current:
2.6 A
Transistor Material:
Si
Width:
0.8mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
20 V
Package Type:
WLCSP
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
6.3 nC @ 4.5 V
Channel Type:
P
Length:
0.8mm
Pin Count:
4
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
1.3 W
Series:
PowerTrench
Maximum Gate Source Voltage:
-8 V, +8 V
Height:
0.15mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
315 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
1.2V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
4-XFBGA, WLCSP
Rds On (Max) @ Id, Vgs:
140mOhm @ 2A, 4.5V
edacadModel:
FDZ661PZ Models
Gate Charge (Qg) (Max) @ Vgs:
8.8 nC @ 4.5 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.5V, 4.5V
edacadModelUrl:
/en/models/3163283
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
20 V
Vgs (Max):
±8V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
1.3W (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
555 pF @ 10 V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
4-WLCSP (0.8x0.8)
Current - Continuous Drain (Id) @ 25°C:
2.6A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDZ661
ECCN:
EAR99
