N-Channel MOSFET, 12 A, 60 V, 3-Pin TO-220 onsemi MTP3055VL
Product Information
Maximum Drain Source Voltage:
60 V
Typical Gate Charge @ Vgs:
7.8 nC @ 5 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
48 W
Maximum Gate Source Voltage:
-15 V, +15 V
Height:
16.51mm
Width:
4.83mm
Length:
10.67mm
Minimum Gate Threshold Voltage:
1V
Package Type:
TO-220
Number of Elements per Chip:
1
Minimum Operating Temperature:
-65 °C
Maximum Continuous Drain Current:
12 A
Transistor Material:
Si
Maximum Drain Source Resistance:
180 mΩ
Channel Type:
N
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2V @ 250µA
Operating Temperature:
-65°C ~ 175°C (TJ)
Package / Case:
TO-220-3
Rds On (Max) @ Id, Vgs:
180mOhm @ 6A, 5V
Gate Charge (Qg) (Max) @ Vgs:
10 nC @ 5 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
5V
Package:
Tube
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±15V
Moisture Sensitivity Level (MSL):
Not Applicable
Power Dissipation (Max):
48W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
570 pF @ 25 V
standardLeadTime:
6 Weeks
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220-3
Current - Continuous Drain (Id) @ 25°C:
12A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
MTP3055
ECCN:
EAR99
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FAQs
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Yes. We ship MTP3055VL Internationally to many countries around the world.
This is N-Channel MOSFET 12 A 60 V 3-Pin TO-220 manufactured by onsemi. The manufacturer part number is MTP3055VL. It has a maximum of 60 v drain source voltage. With a typical gate charge at Vgs includes 7.8 nc @ 5 v. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 48 w maximum power dissipation. It features a maximum gate source voltage of -15 v, +15 v. In addition, the height is 16.51mm. Furthermore, the product is 4.83mm wide. Its accurate length is 10.67mm. Whereas its minimum gate threshold voltage includes 1v. The package is a sort of to-220. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -65 °c. While 12 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 180 mω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2v @ 250µa. The product has -65°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-220-3. It has a maximum Rds On and voltage of 180mohm @ 6a, 5v. The maximum gate charge and given voltages include 10 nc @ 5 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 5v. It is shipped in tube package . The product has a 60 v drain to source voltage. The maximum Vgs rate is ±15v. Its typical moisture sensitivity level is not applicable. The product carries maximum power dissipation 48w (tc). The product's input capacitance at maximum includes 570 pf @ 25 v. It has a long 6 weeks standard lead time. to-220-3 is the supplier device package value. The continuous current drain at 25°C is 12a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to mtp3055, a base product number of the product. The product is designated with the ear99 code number.
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