N-Channel MOSFET, 3.2 A, 300 V, 3-Pin TO-220 onsemi FQP3N30
Product Information
Maximum Drain Source Voltage:
300 V
Typical Gate Charge @ Vgs:
5.5 nC @ 10 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
55 W
Series:
QFET
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
16.3mm
Width:
4.7mm
Length:
10.67mm
Minimum Gate Threshold Voltage:
3V
Package Type:
TO-220
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
3.2 A
Transistor Material:
Si
Maximum Drain Source Resistance:
2.2 Ω
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3
Rds On (Max) @ Id, Vgs:
2.2Ohm @ 1.6A, 10V
Gate Charge (Qg) (Max) @ Vgs:
7 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
300 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
Not Applicable
Power Dissipation (Max):
55W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
230 pF @ 25 V
Mounting Type:
Through Hole
Series:
QFET®
Supplier Device Package:
TO-220-3
Current - Continuous Drain (Id) @ 25°C:
3.2A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FQP3
ECCN:
EAR99
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FAQs
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
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Yes. We ship FQP3N30 Internationally to many countries around the world.
This is N-Channel MOSFET 3.2 A 300 V 3-Pin TO-220 manufactured by onsemi. The manufacturer part number is FQP3N30. It has a maximum of 300 v drain source voltage. With a typical gate charge at Vgs includes 5.5 nc @ 10 v. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 55 w maximum power dissipation. The product qfet, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 16.3mm. Furthermore, the product is 4.7mm wide. Its accurate length is 10.67mm. Whereas its minimum gate threshold voltage includes 3v. The package is a sort of to-220. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 3.2 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 2.2 ω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3. It has a maximum Rds On and voltage of 2.2ohm @ 1.6a, 10v. The maximum gate charge and given voltages include 7 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tube package . The product has a 300 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is not applicable. The product carries maximum power dissipation 55w (tc). The product's input capacitance at maximum includes 230 pf @ 25 v. The product qfet®, is a highly preferred choice for users. to-220-3 is the supplier device package value. The continuous current drain at 25°C is 3.2a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to fqp3, a base product number of the product. The product is designated with the ear99 code number.
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