N-Channel MOSFET, 80 A, 60 V, 3-Pin TO-220 onsemi FDP80N06
Product Information
Maximum Continuous Drain Current:
80 A
Transistor Material:
Si
Width:
4.83mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Package Type:
TO-220
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
57 nC @ 10 V
Channel Type:
N
Length:
10.67mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
176 W
Series:
UniFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
16.51mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
10 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-220-3
Rds On (Max) @ Id, Vgs:
10mOhm @ 40A, 10V
Gate Charge (Qg) (Max) @ Vgs:
74 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
Not Applicable
Power Dissipation (Max):
176W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
3190 pF @ 25 V
Mounting Type:
Through Hole
Series:
UniFET™
Supplier Device Package:
TO-220-3
Current - Continuous Drain (Id) @ 25°C:
80A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDP80
ECCN:
EAR99
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Yes. We ship FDP80N06 Internationally to many countries around the world.
This is N-Channel MOSFET 80 A 60 V 3-Pin TO-220 manufactured by onsemi. The manufacturer part number is FDP80N06. While 80 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.83mm wide. The product offers single transistor configuration. It has a maximum of 60 v drain source voltage. The package is a sort of to-220. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 57 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.67mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 176 w maximum power dissipation. The product unifet, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 16.51mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 10 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-220-3. It has a maximum Rds On and voltage of 10mohm @ 40a, 10v. The maximum gate charge and given voltages include 74 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tube package . The product has a 60 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is not applicable. The product carries maximum power dissipation 176w (tc). The product's input capacitance at maximum includes 3190 pf @ 25 v. The product unifet™, is a highly preferred choice for users. to-220-3 is the supplier device package value. The continuous current drain at 25°C is 80a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to fdp80, a base product number of the product. The product is designated with the ear99 code number.
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