N-Channel MOSFET, 120 A, 313 A, 60 V, 3-Pin TO-220 onsemi FDP020N06B_F102
Product Information
Maximum Continuous Drain Current:
120 A, 313 A
Transistor Material:
Si
Width:
4.672mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Package Type:
TO-220
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.5V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
206 nC @ 10 V
Channel Type:
N
Length:
10.36mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
333 W
Series:
PowerTrench
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
15.215mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
2 mΩ
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of N-Channel MOSFET, 120 A, 313 A, 60 V, 3-Pin TO-220 onsemi FDP020N06B_F102. You can also check on our website or by contacting our customer support team for further order details on N-Channel MOSFET, 120 A, 313 A, 60 V, 3-Pin TO-220 onsemi FDP020N06B_F102.
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This is N-Channel MOSFET 120 A 313 A 60 V 3-Pin TO-220 manufactured by onsemi. The manufacturer part number is FDP020N06B_F102. While 120 a, 313 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.672mm wide. The product offers single transistor configuration. It has a maximum of 60 v drain source voltage. The package is a sort of to-220. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2.5v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 206 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.36mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 333 w maximum power dissipation. The product powertrench, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 15.215mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 2 mω maximum drain source resistance.
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