N-Channel MOSFET, 4 A, 900 V, 3-Pin TO-220 onsemi FQP4N90C
Product Information
Maximum Continuous Drain Current:
4 A
Transistor Material:
Si
Width:
4.5mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
900 V
Package Type:
TO-220
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
17 nC @ 10 V
Channel Type:
N
Length:
9.9mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
140 W
Series:
QFET
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
9.2mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
4.2 Ω
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3
Rds On (Max) @ Id, Vgs:
4.2Ohm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs:
22 nC @ 10 V
Vgs(th) (Max) @ Id:
5V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
FQP4N90C Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/1055331
Drain to Source Voltage (Vdss):
900 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
Not Applicable
Power Dissipation (Max):
140W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
960 pF @ 25 V
Mounting Type:
Through Hole
Series:
QFET®
Supplier Device Package:
TO-220-3
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
4A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FQP4
ECCN:
EAR99
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FAQs
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You can order onsemi brand products with FQP4N90C directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of N-Channel MOSFET, 4 A, 900 V, 3-Pin TO-220 onsemi FQP4N90C. You can also check on our website or by contacting our customer support team for further order details on N-Channel MOSFET, 4 A, 900 V, 3-Pin TO-220 onsemi FQP4N90C.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET21466028 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "onsemi" products on our website by using Enrgtech's Unique Manufacturing Part Number ET21466028.
Yes. We ship FQP4N90C Internationally to many countries around the world.
This is N-Channel MOSFET 4 A 900 V 3-Pin TO-220 manufactured by onsemi. The manufacturer part number is FQP4N90C. While 4 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.5mm wide. The product offers single transistor configuration. It has a maximum of 900 v drain source voltage. The package is a sort of to-220. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 3v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 17 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 9.9mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 140 w maximum power dissipation. The product qfet, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 9.2mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 4.2 ω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3. It has a maximum Rds On and voltage of 4.2ohm @ 2a, 10v. The maximum gate charge and given voltages include 22 nc @ 10 v. The typical Vgs (th) (max) of the product is 5v @ 250µa. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 900 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is not applicable. The product carries maximum power dissipation 140w (tc). The product's input capacitance at maximum includes 960 pf @ 25 v. The product qfet®, is a highly preferred choice for users. to-220-3 is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 4a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to fqp4, a base product number of the product. The product is designated with the ear99 code number.
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