N-Channel MOSFET, 10 A, 250 V, 3-Pin IPAK onsemi NDDP010N25AZ-1H
Product Information
Maximum Continuous Drain Current:
10 A
Transistor Material:
Si
Width:
2.3mm
Transistor Configuration:
Single
Priced to Clear:
Yes
Maximum Drain Source Voltage:
250 V
Maximum Gate Threshold Voltage:
4.5V
Package Type:
IPAK
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
16 nC @ 10 V
Channel Type:
N
Length:
6.5mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
52 W
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
7mm
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
420 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4.5V @ 1mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-251-3 Short Leads, IPak, TO-251AA
Gate Charge (Qg) (Max) @ Vgs:
16 nC @ 10 V
REACH Status:
REACH Unaffected
Rds On (Max) @ Id, Vgs:
420mOhm @ 5A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Bag
Drain to Source Voltage (Vdss):
250 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
1W (Ta), 52W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
980 pF @ 20 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
IPAK/TP
Current - Continuous Drain (Id) @ 25°C:
10A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NDDP0
ECCN:
EAR99
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This is N-Channel MOSFET 10 A 250 V 3-Pin IPAK manufactured by onsemi. The manufacturer part number is NDDP010N25AZ-1H. While 10 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 2.3mm wide. The product offers single transistor configuration. Priced to Clear Options - yes. It has a maximum of 250 v drain source voltage. The product carries 4.5v of maximum gate threshold voltage. The package is a sort of ipak. It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 16 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 6.5mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 52 w maximum power dissipation. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 7mm. Its forward diode voltage is 1.2v . It provides up to 420 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4.5v @ 1ma. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-251-3 short leads, ipak, to-251aa. The maximum gate charge and given voltages include 16 nc @ 10 v. In addition, it is reach unaffected. It has a maximum Rds On and voltage of 420mohm @ 5a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in bag package . The product has a 250 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 1w (ta), 52w (tc). The product's input capacitance at maximum includes 980 pf @ 20 v. ipak/tp is the supplier device package value. The continuous current drain at 25°C is 10a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to nddp0, a base product number of the product. The product is designated with the ear99 code number.
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