Forward Voltage Vf:
1.1V
Width:
5.1 mm
Automotive Standard:
No
Typical Gate Charge Qg @ Vgs:
18.6nC
Package Type:
SO-8FL
Maximum Continuous Drain Current Id:
46A
Product Type:
MOSFET
Maximum Drain Source Resistance Rds:
10.8mΩ
Maximum Operating Temperature:
150°C
Maximum Drain Source Voltage Vds:
30V
Channel Type:
Type N
Length:
6.1mm
Standards/Approvals:
No
Pin Count:
8
Mount Type:
Surface
Maximum Power Dissipation Pd:
23.6W
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
20 V
Series:
NTMFS4C10N
Height:
1.05mm
Minimum Operating Temperature:
-55°C
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN, 5 Leads
Rds On (Max) @ Id, Vgs:
6.95mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs:
9.7 nC @ 4.5 V
Vgs(th) (Max) @ Id:
2.2V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
NTMFS4C10NT1G Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
edacadModelUrl:
/en/models/5131375
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
750mW (Ta), 23.6W (Tc)
standardLeadTime:
10 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
987 pF @ 15 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
5-DFN (5x6) (8-SOFL)
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
8.2A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NTMFS4
ECCN:
EAR99
