Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
14.1 nC @ 11.5 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
32.6 W
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
2.5V
Height:
2.38mm
Width:
7.49mm
Length:
6.73mm
Maximum Drain Source Resistance:
25 mΩ
Package Type:
IPAK (TO-251)
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
35 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-251-3 Stub Leads, IPak
Rds On (Max) @ Id, Vgs:
15mOhm @ 30A, 10V
edacadModel:
NTD4815N-35G Models
Gate Charge (Qg) (Max) @ Vgs:
14.1 nC @ 11.5 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 11.5V
edacadModelUrl:
/en/models/1484786
Package:
Tube
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
1.26W (Ta), 32.6W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
770 pF @ 12 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
I-Pak
Current - Continuous Drain (Id) @ 25°C:
6.9A (Ta), 35A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NTD4815
ECCN:
EAR99
