N-Channel MOSFET, 260 mA, 60 V, 3-Pin SOT-23 onsemi 2N7002ET
Product Information
Maximum Drain Source Voltage:
60 V
Typical Gate Charge @ Vgs:
0.81 nC @ 5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
300 mW
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
2.5V
Height:
0.94mm
Width:
1.3mm
Length:
2.9mm
Maximum Drain Source Resistance:
2.5 Ω
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
260 mA
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
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Yes. We ship 2N7002ET Internationally to many countries around the world.
This is N-Channel MOSFET 260 mA 60 V 3-Pin SOT-23 manufactured by onsemi. The manufacturer part number is 2N7002ET. It has a maximum of 60 v drain source voltage. With a typical gate charge at Vgs includes 0.81 nc @ 5 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 300 mw maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. The product carries 2.5v of maximum gate threshold voltage. In addition, the height is 0.94mm. Furthermore, the product is 1.3mm wide. Its accurate length is 2.9mm. It provides up to 2.5 ω maximum drain source resistance. The package is a sort of sot-23. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 260 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.
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