Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
15.6 nC @ 10 V, 7.4 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.25 W
Maximum Gate Source Voltage:
-12 V, +12 V
Maximum Gate Threshold Voltage:
1.4V
Height:
1.01mm
Width:
1.4mm
Length:
3.04mm
Maximum Drain Source Resistance:
150 mΩ
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
3.5 A
Transistor Material:
Si
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
1.4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Rds On (Max) @ Id, Vgs:
75mOhm @ 2.2A, 10V
Gate Charge (Qg) (Max) @ Vgs:
15.6 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
NTR4171PT1G Models
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 10V
edacadModelUrl:
/en/models/2050558
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±12V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
480mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
720 pF @ 15 V
standardLeadTime:
48 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SOT-23-3 (TO-236)
Current - Continuous Drain (Id) @ 25°C:
2.2A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NTR4171
ECCN:
EAR99
