P-Channel MOSFET, 12 A, 60 V, 3-Pin TO-220 onsemi NTP2955G
Product Information
Maximum Drain Source Voltage:
60 V
Typical Gate Charge @ Vgs:
14 nC @ 10 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
62.5 W
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
4V
Height:
9.28mm
Width:
4.82mm
Length:
10.28mm
Maximum Drain Source Resistance:
196 mΩ
Package Type:
TO-220
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
12 A
Transistor Material:
Si
Channel Type:
P
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-220-3
Rds On (Max) @ Id, Vgs:
196mOhm @ 12A, 10V
edacadModel:
NTP2955G Models
Gate Charge (Qg) (Max) @ Vgs:
14 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/1484935
Package:
Tube
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
700 pF @ 25 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220
Current - Continuous Drain (Id) @ 25°C:
2.4A (Ta)
Power Dissipation (Max):
2.4W (Ta), 62.5W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NTP2955
ECCN:
EAR99
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
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Yes. We ship NTP2955G Internationally to many countries around the world.
This is P-Channel MOSFET 12 A 60 V 3-Pin TO-220 manufactured by onsemi. The manufacturer part number is NTP2955G. It has a maximum of 60 v drain source voltage. With a typical gate charge at Vgs includes 14 nc @ 10 v. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 62.5 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. The product carries 4v of maximum gate threshold voltage. In addition, the height is 9.28mm. Furthermore, the product is 4.82mm wide. Its accurate length is 10.28mm. It provides up to 196 mω maximum drain source resistance. The package is a sort of to-220. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 12 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-220-3. It has a maximum Rds On and voltage of 196mohm @ 12a, 10v. The maximum gate charge and given voltages include 14 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tube package . The product has a 60 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 700 pf @ 25 v. to-220 is the supplier device package value. The continuous current drain at 25°C is 2.4a (ta). The product carries maximum power dissipation 2.4w (ta), 62.5w (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ntp2955, a base product number of the product. The product is designated with the ear99 code number.
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