N-Channel MOSFET, 59 A, 30 V, 8-Pin SO-8FL onsemi NTMFS4841NHT1G
Product Information
Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
11.3 nC @ 4.5 V, 24.4 nC @ 11.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
41.7 W
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
2.5V
Height:
1.1mm
Width:
6.1mm
Length:
5.1mm
Maximum Drain Source Resistance:
11.6 mΩ
Package Type:
SO-8FL
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
59 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
8
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN, 5 Leads
Rds On (Max) @ Id, Vgs:
7mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs:
33 nC @ 11.5 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
870mW (Ta), 41.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
2113 pF @ 12 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
5-DFN (5x6) (8-SOFL)
Current - Continuous Drain (Id) @ 25°C:
8.6A (Ta), 59A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NTMFS4841
ECCN:
EAR99
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This is N-Channel MOSFET 59 A 30 V 8-Pin SO-8FL manufactured by onsemi. The manufacturer part number is NTMFS4841NHT1G. It has a maximum of 30 v drain source voltage. With a typical gate charge at Vgs includes 11.3 nc @ 4.5 v, 24.4 nc @ 11.5 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 41.7 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. The product carries 2.5v of maximum gate threshold voltage. In addition, the height is 1.1mm. Furthermore, the product is 6.1mm wide. Its accurate length is 5.1mm. It provides up to 11.6 mω maximum drain source resistance. The package is a sort of so-8fl. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 59 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 8 pins. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2.5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-powertdfn, 5 leads. It has a maximum Rds On and voltage of 7mohm @ 30a, 10v. The maximum gate charge and given voltages include 33 nc @ 11.5 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It is shipped in tape & reel (tr) package . The product has a 30 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 870mw (ta), 41.7w (tc). The product's input capacitance at maximum includes 2113 pf @ 12 v. 5-dfn (5x6) (8-sofl) is the supplier device package value. The continuous current drain at 25°C is 8.6a (ta), 59a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ntmfs4841, a base product number of the product. The product is designated with the ear99 code number.
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