N-Channel MOSFET, 10 A, 600 V, 3-Pin TO-220FP onsemi NDF10N60ZG
Product Information
Maximum Drain Source Voltage:
600 V
Typical Gate Charge @ Vgs:
47 nC @ 10 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
39 W
Maximum Gate Source Voltage:
-30 V, +30 V
Maximum Gate Threshold Voltage:
4.5V
Height:
16.12mm
Width:
4.9mm
Length:
10.63mm
Maximum Drain Source Resistance:
750 mΩ
Package Type:
TO-220FP
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
10 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4.5V @ 100µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3 Full Pack
Gate Charge (Qg) (Max) @ Vgs:
68 nC @ 10 V
REACH Status:
REACH Unaffected
Rds On (Max) @ Id, Vgs:
750mOhm @ 5A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
39W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1645 pF @ 25 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220FP
Current - Continuous Drain (Id) @ 25°C:
10A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NDF10
ECCN:
EAR99
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This is N-Channel MOSFET 10 A 600 V 3-Pin TO-220FP manufactured by onsemi. The manufacturer part number is NDF10N60ZG. It has a maximum of 600 v drain source voltage. With a typical gate charge at Vgs includes 47 nc @ 10 v. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 39 w maximum power dissipation. It features a maximum gate source voltage of -30 v, +30 v. The product carries 4.5v of maximum gate threshold voltage. In addition, the height is 16.12mm. Furthermore, the product is 4.9mm wide. Its accurate length is 10.63mm. It provides up to 750 mω maximum drain source resistance. The package is a sort of to-220fp. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 10 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4.5v @ 100µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3 full pack. The maximum gate charge and given voltages include 68 nc @ 10 v. In addition, it is reach unaffected. It has a maximum Rds On and voltage of 750mohm @ 5a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tube package . The product has a 600 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 39w (tc). The product's input capacitance at maximum includes 1645 pf @ 25 v. to-220fp is the supplier device package value. The continuous current drain at 25°C is 10a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ndf10, a base product number of the product. The product is designated with the ear99 code number.
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