Maximum Drain Source Voltage:
60 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
830 mW
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
3V
Height:
5.33mm
Width:
4.19mm
Length:
5.2mm
Minimum Gate Threshold Voltage:
0.8V
Package Type:
TO-92
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
500 mA
Transistor Material:
Si
Maximum Drain Source Resistance:
5 Ω
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
3V @ 1mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-226-3, TO-92-3 (TO-226AA)
Rds On (Max) @ Id, Vgs:
5Ohm @ 200mA, 10V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
BS170 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/244280
Package:
Bulk
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
Not Applicable
Power Dissipation (Max):
830mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
40 pF @ 10 V
standardLeadTime:
10 Weeks
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-92-3
Current - Continuous Drain (Id) @ 25°C:
500mA (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
BS170
ECCN:
EAR99
