Maximum Drain Source Voltage:
60 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
830 mW
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
3V
Height:
5.33mm
Width:
4.19mm
Length:
5.2mm
Minimum Gate Threshold Voltage:
0.8V
Package Type:
TO-92
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
500 mA
Transistor Material:
Si
Maximum Drain Source Resistance:
5 Ω
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
3V @ 1mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-226-3, TO-92-3 (TO-226AA)
Rds On (Max) @ Id, Vgs:
5Ohm @ 200mA, 10V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
BS170 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/244280
Package:
Bulk
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
Not Applicable
Power Dissipation (Max):
830mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
40 pF @ 10 V
standardLeadTime:
10 Weeks
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-92-3
Current - Continuous Drain (Id) @ 25°C:
500mA (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
BS170
ECCN:
EAR99
This is N-Channel MOSFET 500 mA 60 V 3-Pin TO-92 manufactured by onsemi. The manufacturer part number is BS170. It has a maximum of 60 v drain source voltage. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 830 mw maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. The product carries 3v of maximum gate threshold voltage. In addition, the height is 5.33mm. Furthermore, the product is 4.19mm wide. Its accurate length is 5.2mm. Whereas its minimum gate threshold voltage includes 0.8v. The package is a sort of to-92. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 500 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 5 ω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 3v @ 1ma. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-226-3, to-92-3 (to-226aa). It has a maximum Rds On and voltage of 5ohm @ 200ma, 10v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in bulk package . The product has a 60 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is not applicable. The product carries maximum power dissipation 830mw (ta). The product's input capacitance at maximum includes 40 pf @ 10 v. It has a long 10 weeks standard lead time. to-92-3 is the supplier device package value. The continuous current drain at 25°C is 500ma (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to bs170, a base product number of the product. The product is designated with the ear99 code number.
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