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N-Channel MOSFET, 4 A, 60 V, 3 + Tab-Pin SOT-223 onsemi NDT3055L

NDT3055L N-Channel MOSFET, 4 A, 60 V, 3 + Tab-Pin SOT-223 onsemi
NDT3055L
NDT3055L
onsemi

Product Information

Maximum Drain Source Voltage:
60 V
Typical Gate Charge @ Vgs:
13 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
3 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.6mm
Width:
3.56mm
Length:
6.5mm
Minimum Gate Threshold Voltage:
1V
Package Type:
SOT-223
Number of Elements per Chip:
1
Minimum Operating Temperature:
-65 °C
Maximum Continuous Drain Current:
4 A
Transistor Material:
Si
Maximum Drain Source Resistance:
100 mΩ
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2V @ 250µA
Operating Temperature:
-65°C ~ 150°C (TJ)
Package / Case:
TO-261-4, TO-261AA
Rds On (Max) @ Id, Vgs:
100mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs:
20 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
NDT3055L Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
edacadModelUrl:
/en/models/244223
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
3W (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
345 pF @ 25 V
standardLeadTime:
10 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SOT-223-4
Current - Continuous Drain (Id) @ 25°C:
4A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NDT3055
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is N-Channel MOSFET 4 A 60 V 3 + Tab-Pin SOT-223 manufactured by onsemi. The manufacturer part number is NDT3055L. It has a maximum of 60 v drain source voltage. With a typical gate charge at Vgs includes 13 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 3 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1.6mm. Furthermore, the product is 3.56mm wide. Its accurate length is 6.5mm. Whereas its minimum gate threshold voltage includes 1v. The package is a sort of sot-223. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -65 °c. While 4 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 100 mω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2v @ 250µa. The product has -65°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-261-4, to-261aa. It has a maximum Rds On and voltage of 100mohm @ 4a, 10v. The maximum gate charge and given voltages include 20 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It is shipped in tape & reel (tr) package . The product has a 60 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 3w (ta). The product's input capacitance at maximum includes 345 pf @ 25 v. It has a long 10 weeks standard lead time. sot-223-4 is the supplier device package value. The continuous current drain at 25°C is 4a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ndt3055, a base product number of the product. The product is designated with the ear99 code number.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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onsemi RoHS(Environmental Information)
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onsemi REACH(Environmental Information)
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Mult Dev 30/May/2023(PCN Assembly/Origin)
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Marking Lay-out Implementation 07/Oct/2022(PCN Design/Specification)
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Marking Lay-out Implementation 17/Nov/2021(PCN Design/Specification)
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NDT3055L Datasheet(Datasheets)
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Identification Change 07/Oct/2022(PCN Packaging)
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Mult Devices 24/Oct/2017(PCN Packaging)

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You will get a confirmation email regarding your order of N-Channel MOSFET, 4 A, 60 V, 3 + Tab-Pin SOT-223 onsemi NDT3055L. You can also check on our website or by contacting our customer support team for further order details on N-Channel MOSFET, 4 A, 60 V, 3 + Tab-Pin SOT-223 onsemi NDT3055L.
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