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N-Channel MOSFET, 12 A, 100 V, 3-Pin D2PAK onsemi FDB3632

FDB3632 N-Channel MOSFET, 12 A, 100 V, 3-Pin D2PAK onsemi
FDB3632
FDB3632
onsemi

Product Information

Maximum Continuous Drain Current:
12 A
Transistor Material:
Si
Width:
9.65mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
84 nC @ 10 V
Channel Type:
N
Length:
10.67mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
310 W
Series:
PowerTrench
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
4.83mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
9 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Rds On (Max) @ Id, Vgs:
9mOhm @ 80A, 10V
Gate Charge (Qg) (Max) @ Vgs:
110 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
FDB3632 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
edacadModelUrl:
/en/models/965273
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
310W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
6000 pF @ 25 V
standardLeadTime:
15 Weeks
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
TO-263 (D2PAK)
Current - Continuous Drain (Id) @ 25°C:
12A (Ta), 80A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDB363
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is N-Channel MOSFET 12 A 100 V 3-Pin D2PAK manufactured by onsemi. The manufacturer part number is FDB3632. While 12 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 9.65mm wide. The product offers single transistor configuration. It has a maximum of 100 v drain source voltage. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 84 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.67mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 310 w maximum power dissipation. The product powertrench, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 4.83mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 9 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-263-3, d2pak (2 leads + tab), to-263ab. It has a maximum Rds On and voltage of 9mohm @ 80a, 10v. The maximum gate charge and given voltages include 110 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 6v, 10v. It is shipped in tape & reel (tr) package . The product has a 100 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 310w (tc). The product's input capacitance at maximum includes 6000 pf @ 25 v. It has a long 15 weeks standard lead time. The product powertrench®, is a highly preferred choice for users. to-263 (d2pak) is the supplier device package value. The continuous current drain at 25°C is 12a (ta), 80a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to fdb363, a base product number of the product. The product is designated with the ear99 code number.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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onsemi RoHS(Environmental Information)
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onsemi REACH(Environmental Information)
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Mult Dev Assembly 08/Jan/2024(PCN Assembly/Origin)
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Description Chg 01/Apr/2016(PCN Design/Specification)
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Logo 17/Aug/2017(PCN Design/Specification)
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FDB3632, FDH3632, FDP3632(Datasheets)
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Mult Dev Box Chgs 1/Jul/2021(PCN Packaging)
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Mult Devices 24/Oct/2017(PCN Packaging)

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Yes. You can also search FDB3632 on website for other similar products.
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You can order onsemi brand products with FDB3632 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of N-Channel MOSFET, 12 A, 100 V, 3-Pin D2PAK onsemi FDB3632. You can also check on our website or by contacting our customer support team for further order details on N-Channel MOSFET, 12 A, 100 V, 3-Pin D2PAK onsemi FDB3632.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET21459017 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "onsemi" products on our website by using Enrgtech's Unique Manufacturing Part Number ET21459017.
Yes. We ship FDB3632 Internationally to many countries around the world.