Automotive Standard:
No
Maximum Power Dissipation Pd:
200W
Product Type:
MOSFET
Maximum Drain Source Voltage Vds:
100V
Minimum Operating Temperature:
-55°C
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
110nC
Series:
UltraFET
Maximum Gate Source Voltage Vgs:
20 V
Height:
9.4mm
Width:
4.83 mm
Length:
10.67mm
Package Type:
TO-220
Maximum Drain Source Resistance Rds:
25mΩ
Standards/Approvals:
No
Maximum Continuous Drain Current Id:
56A
Channel Type:
Type N
Maximum Operating Temperature:
175°C
Pin Count:
3
Mount Type:
Through Hole
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-220-3
Rds On (Max) @ Id, Vgs:
25mOhm @ 56A, 10V
Gate Charge (Qg) (Max) @ Vgs:
130 nC @ 20 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
HUF75639P3 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/965374
Package:
Tube
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
Not Applicable
Power Dissipation (Max):
200W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
2000 pF @ 25 V
standardLeadTime:
6 Weeks
Mounting Type:
Through Hole
Series:
UltraFET™
Supplier Device Package:
TO-220-3
Current - Continuous Drain (Id) @ 25°C:
56A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
HUF75639
ECCN:
EAR99
