Maximum Continuous Drain Current:
12 A
Transistor Material:
Si
Width:
3mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
40 V
Package Type:
Power 33
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
12 nC @ 5 V, 21 nC @ 10 V
Channel Type:
N
Length:
3mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
1.9 W
Series:
PowerTrench
Maximum Gate Source Voltage:
-12 V, +12 V
Height:
0.75mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
28 mΩ
FET Feature:
Logic Level Gate
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
2.8V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerWDFN
Rds On (Max) @ Id, Vgs:
10mOhm @ 12A, 10V
edacadModel:
FDMC8030 Models
Gate Charge (Qg) (Max) @ Vgs:
30nC @ 10V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
Current - Continuous Drain (Id) @ 25°C:
12A
edacadModelUrl:
/en/models/3163281
Configuration:
2 N-Channel (Dual)
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
40V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
1975pF @ 20V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
8-Power33 (3x3)
Power - Max:
800mW
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDMC80
ECCN:
EAR99
This is Dual N-Channel MOSFET 12 A 40 V 8-Pin Power 33 manufactured by onsemi. The manufacturer part number is FDMC8030. While 12 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 3mm wide. The product offers isolated transistor configuration. It has a maximum of 40 v drain source voltage. The package is a sort of power 33. It consists of 2 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 12 nc @ 5 v, 21 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 3mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 1.9 w maximum power dissipation. The product powertrench, is a highly preferred choice for users. It features a maximum gate source voltage of -12 v, +12 v. In addition, the height is 0.75mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 28 mω maximum drain source resistance. The FET features of the product include logic level gate. It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 2.8v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-powerwdfn. It has a maximum Rds On and voltage of 10mohm @ 12a, 10v. The maximum gate charge and given voltages include 30nc @ 10v. The product is rohs3 compliant. In addition, it is reach unaffected. The continuous current drain at 25°C is 12a. The product is available in 2 n-channel (dual) configuration. It is shipped in tape & reel (tr) package . The product has a 40v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 1975pf @ 20v. The product powertrench®, is a highly preferred choice for users. 8-power33 (3x3) is the supplier device package value. The maximum power of the product is 800mw. This product use mosfet (metal oxide) technology. Moreover, it corresponds to fdmc80, a base product number of the product. The product is designated with the ear99 code number.
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