N-Channel MOSFET, 30 A, 50 V, 3-Pin TO-220AB onsemi BUZ11_NR4941
Product Information
Maximum Drain Source Voltage:
50 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
75 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
16.51mm
Width:
4.83mm
Length:
10.67mm
Minimum Gate Threshold Voltage:
2.1V
Package Type:
TO-220AB
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
30 A
Transistor Material:
Si
Maximum Drain Source Resistance:
40 mΩ
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Checking for live stock
FAQs
Yes. You can also search BUZ11_NR4941 on website for other similar products.
We accept all major payment methods for all products including ET21458922. Please check your shopping cart at the time of order.
You can order onsemi brand products with BUZ11_NR4941 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of N-Channel MOSFET, 30 A, 50 V, 3-Pin TO-220AB onsemi BUZ11_NR4941. You can also check on our website or by contacting our customer support team for further order details on N-Channel MOSFET, 30 A, 50 V, 3-Pin TO-220AB onsemi BUZ11_NR4941.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET21458922 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "onsemi" products on our website by using Enrgtech's Unique Manufacturing Part Number ET21458922.
Yes. We ship BUZ11_NR4941 Internationally to many countries around the world.
This is N-Channel MOSFET 30 A 50 V 3-Pin TO-220AB manufactured by onsemi. The manufacturer part number is BUZ11_NR4941. It has a maximum of 50 v drain source voltage. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 75 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 16.51mm. Furthermore, the product is 4.83mm wide. Its accurate length is 10.67mm. Whereas its minimum gate threshold voltage includes 2.1v. The package is a sort of to-220ab. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 30 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 40 mω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.
Reviews
Don’t hesitate to ask questions for better clarification.