Maximum Drain Source Voltage:
20 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
200 mW
Maximum Gate Source Voltage:
-8 V, +8 V
Maximum Gate Threshold Voltage:
1V
Height:
0.4mm
Width:
0.85mm
Length:
1.05mm
Maximum Drain Source Resistance:
4.5 Ω
Package Type:
SOT-963
Number of Elements per Chip:
2
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
280 mA
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
Isolated
FET Feature:
Logic Level Gate
HTSUS:
8541.21.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SOT-963
Rds On (Max) @ Id, Vgs:
1.5Ohm @ 100mA, 4.5V
title:
NTUD3170NZT5G
Vgs(th) (Max) @ Id:
1V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
NTUD3170NZT5G Models
Current - Continuous Drain (Id) @ 25°C:
220mA
edacadModelUrl:
/en/models/1973735
Configuration:
2 N-Channel (Dual)
Manufacturer:
onsemi
Drain to Source Voltage (Vdss):
20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
16 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
12.5pF @ 15V
Mounting Type:
Surface Mount
Series:
-
Gate Charge (Qg) (Max) @ Vgs:
-
Supplier Device Package:
SOT-963
Packaging:
Tape & Reel (TR)
Power - Max:
125mW
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NTUD3170
ECCN:
EAR99
