P-Channel MOSFET, 20 A, 60 V, 8-Pin WDFN onsemi NTTFS5116PLTAG
Product Information
Maximum Drain Source Voltage:
60 V
Typical Gate Charge @ Vgs:
14 nC @ 4.5 V, 25 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
40 W
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
3V
Height:
0.75mm
Width:
3.15mm
Length:
3.15mm
Maximum Drain Source Resistance:
72 mΩ
Package Type:
WDFN
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
20 A
Transistor Material:
Si
Channel Type:
P
Maximum Operating Temperature:
+175 °C
Pin Count:
8
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
8-PowerWDFN
Rds On (Max) @ Id, Vgs:
52mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs:
25 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
3.2W (Ta), 40W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1258 pF @ 30 V
standardLeadTime:
19 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
8-WDFN (3.3x3.3)
Current - Continuous Drain (Id) @ 25°C:
5.7A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NTTFS5116
ECCN:
EAR99
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FAQs
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Yes. We ship NTTFS5116PLTAG Internationally to many countries around the world.
This is P-Channel MOSFET 20 A 60 V 8-Pin WDFN manufactured by onsemi. The manufacturer part number is NTTFS5116PLTAG. It has a maximum of 60 v drain source voltage. With a typical gate charge at Vgs includes 14 nc @ 4.5 v, 25 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 40 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. The product carries 3v of maximum gate threshold voltage. In addition, the height is 0.75mm. Furthermore, the product is 3.15mm wide. Its accurate length is 3.15mm. It provides up to 72 mω maximum drain source resistance. The package is a sort of wdfn. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 20 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +175 °c. It contains 8 pins. The product offers single transistor configuration. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 3v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in 8-powerwdfn. It has a maximum Rds On and voltage of 52mohm @ 6a, 10v. The maximum gate charge and given voltages include 25 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It is shipped in tape & reel (tr) package . The product has a 60 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 3.2w (ta), 40w (tc). The product's input capacitance at maximum includes 1258 pf @ 30 v. It has a long 19 weeks standard lead time. 8-wdfn (3.3x3.3) is the supplier device package value. The continuous current drain at 25°C is 5.7a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to nttfs5116, a base product number of the product. The product is designated with the ear99 code number.
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