Forward Voltage Vf:
-1.2V
Width:
3.15 mm
Automotive Standard:
No
Typical Gate Charge Qg @ Vgs:
25nC
Package Type:
WDFN
Maximum Continuous Drain Current Id:
20A
Product Type:
MOSFET
Maximum Drain Source Resistance Rds:
72mΩ
Maximum Operating Temperature:
175°C
Maximum Drain Source Voltage Vds:
60V
Channel Type:
Type P
Length:
3.15mm
Standards/Approvals:
No
Pin Count:
8
Mount Type:
Surface
Maximum Power Dissipation Pd:
40W
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
20 V
Series:
NTTFS5116PL
Height:
0.75mm
Minimum Operating Temperature:
-55°C
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
8-PowerWDFN
Rds On (Max) @ Id, Vgs:
52mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs:
25 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
3.2W (Ta), 40W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1258 pF @ 30 V
standardLeadTime:
19 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
8-WDFN (3.3x3.3)
Current - Continuous Drain (Id) @ 25°C:
5.7A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NTTFS5116
ECCN:
EAR99
