Forward Voltage Vf:
-1.6V
Width:
1.3 mm
Automotive Standard:
No
Typical Gate Charge Qg @ Vgs:
1.64nC
Package Type:
SOT-23
Maximum Continuous Drain Current Id:
680mA
Product Type:
MOSFET
Maximum Drain Source Resistance Rds:
450mΩ
Maximum Operating Temperature:
150°C
Maximum Drain Source Voltage Vds:
25V
Channel Type:
Type N
Length:
2.92mm
Standards/Approvals:
No
Pin Count:
3
Mount Type:
Surface
Maximum Power Dissipation Pd:
350mW
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
8 V
Series:
UniFET
Height:
0.93mm
Minimum Operating Temperature:
-55°C
FET Feature:
-
HTSUS:
8541.21.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Rds On (Max) @ Id, Vgs:
450mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs:
2.3 nC @ 4.5 V
Vgs(th) (Max) @ Id:
1.5V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
FDV303N Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.7V, 4.5V
edacadModelUrl:
/en/models/458853
Drain to Source Voltage (Vdss):
25 V
Vgs (Max):
±8V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
350mW (Ta)
standardLeadTime:
16 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
50 pF @ 10 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SOT-23-3
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
680mA (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDV303
ECCN:
EAR99
