N-Channel MOSFET, 680 mA, 25 V, 3-Pin SOT-23 ON Semiconductor FDV303N
Product Information
Maximum Drain Source Voltage:
25 V
Typical Gate Charge @ Vgs:
1.64 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
350 mW
Maximum Gate Source Voltage:
+8 V
Height:
0.93mm
Width:
1.3mm
Length:
2.92mm
Minimum Gate Threshold Voltage:
0.65V
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
680 mA
Transistor Material:
Si
Maximum Drain Source Resistance:
450 mΩ
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Rds On (Max) @ Id, Vgs:
450mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs:
2.3 nC @ 4.5 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
FDV303N Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.7V, 4.5V
edacadModelUrl:
/en/models/458853
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
25 V
Vgs (Max):
±8V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
350mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
50 pF @ 10 V
standardLeadTime:
42 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SOT-23-3
Current - Continuous Drain (Id) @ 25°C:
680mA (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDV303
ECCN:
EAR99
Checking for live stock
FAQs
Yes. You can also search FDV303N on website for other similar products.
We accept all major payment methods for all products including ET21455850. Please check your shopping cart at the time of order.
You can order onsemi brand products with FDV303N directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of N-Channel MOSFET, 680 mA, 25 V, 3-Pin SOT-23 ON Semiconductor FDV303N. You can also check on our website or by contacting our customer support team for further order details on N-Channel MOSFET, 680 mA, 25 V, 3-Pin SOT-23 ON Semiconductor FDV303N.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET21455850 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "onsemi" products on our website by using Enrgtech's Unique Manufacturing Part Number ET21455850.
Yes. We ship FDV303N Internationally to many countries around the world.
This is N-Channel MOSFET 680 mA 25 V 3-Pin SOT-23 ON Semiconductor manufactured by onsemi. The manufacturer part number is FDV303N. It has a maximum of 25 v drain source voltage. With a typical gate charge at Vgs includes 1.64 nc @ 4.5 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 350 mw maximum power dissipation. It features a maximum gate source voltage of +8 v. In addition, the height is 0.93mm. Furthermore, the product is 1.3mm wide. Its accurate length is 2.92mm. Whereas its minimum gate threshold voltage includes 0.65v. The package is a sort of sot-23. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 680 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 450 mω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 1.5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-236-3, sc-59, sot-23-3. It has a maximum Rds On and voltage of 450mohm @ 500ma, 4.5v. The maximum gate charge and given voltages include 2.3 nc @ 4.5 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 2.7v, 4.5v. It is shipped in tape & reel (tr) package . The product has a 25 v drain to source voltage. The maximum Vgs rate is ±8v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 350mw (ta). The product's input capacitance at maximum includes 50 pf @ 10 v. It has a long 42 weeks standard lead time. sot-23-3 is the supplier device package value. The continuous current drain at 25°C is 680ma (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to fdv303, a base product number of the product. The product is designated with the ear99 code number.
Reviews
Don’t hesitate to ask questions for better clarification.