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ON Semiconductor NTH4L060N090SC1

ON Semiconductor

Product Information

Maximum Drain Source Voltage:
650 V
Maximum Continuous Drain Current:
46 A
Mounting Type:
Through Hole
Series:
SiC Power
Channel Type:
N
Maximum Gate Threshold Voltage:
4.3V
Maximum Drain Source Resistance:
0.084 Ω
Package Type:
TO-247
Number of Elements per Chip:
1
Transistor Material:
SiC
Pin Count:
4
Rds On (Max) @ Id, Vgs:
43mOhm @ 20A, 18V
Detailed Description:
N-Channel 900V 46A (Tc) 221W (Tc) Through Hole TO-247-4L
Input Capacitance (Ciss) (Max) @ Vds:
1770pF @ 450V
Drive Voltage (Max Rds On, Min Rds On):
15V, 18V
Mounting Type:
Through Hole
Vgs(th) (Max) @ Id:
4.3V @ 5mA
Drain to Source Voltage (Vdss):
900V
Vgs (Max):
+22V, -8V
Gate Charge (Qg) (Max) @ Vgs:
87nC @ 15V
Supplier Device Package:
TO-247-4L
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-247-4
Power Dissipation (Max):
221W (Tc)
Current - Continuous Drain (Id) @ 25°C:
46A (Tc)
Technology:
SiC (Silicon Carbide Junction Transistor)
Manufacturer:
ON Semiconductor
RoHs Compliant
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is NTH4L060N090SC1. It has a maximum of 650 v drain source voltage. While 46 a of maximum continuous drain current. The product is available in through hole configuration. The product sic power, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4.3v of maximum gate threshold voltage. It provides up to 0.084 ω maximum drain source resistance. The package is a sort of to-247. It consists of 1 elements per chip. The transistor is manufactured from highly durable sic material. It contains 4 pins. It has a maximum Rds On and voltage of 43mohm @ 20a, 18v. It features n-channel 900v 46a (tc) 221w (tc) through hole to-247-4l. The product's input capacitance at maximum includes 1770pf @ 450v. The drive voltage (maximum and minimum Rds On) of the product includes 15v, 18v. The typical Vgs (th) (max) of the product is 4.3v @ 5ma. The product has a 900v drain to source voltage. The maximum Vgs rate is +22v, -8v. The maximum gate charge and given voltages include 87nc @ 15v. to-247-4l is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 175°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-247-4. The product carries maximum power dissipation 221w (tc). The continuous current drain at 25°C is 46a (tc). This product use sic (silicon carbide junction transistor) technology. The on semiconductor's product offers user-desired applications.

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Datasheet - NTH4L060N090SC1(Technical Reference)
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NTH4L060N090SC1(Datasheets)

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We use our internationally recognized delivery partners UPS/DHL. Collection of ET21212036 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "ON Semiconductor" products on our website by using Enrgtech's Unique Manufacturing Part Number ET21212036.
Yes. We ship NTH4L060N090SC1 Internationally to many countries around the world.