ON Semiconductor NTH4L015N065SC1
Product Information
Maximum Drain Source Voltage:
650 V
Maximum Continuous Drain Current:
142 A
Mounting Type:
Through Hole
Series:
SiC Power
Channel Type:
N
Maximum Gate Threshold Voltage:
4.3V
Maximum Drain Source Resistance:
0.012 Ω
Package Type:
TO-247
Number of Elements per Chip:
1
Transistor Material:
SiC
Pin Count:
4
Manufacturer Standard Lead Time:
14 Weeks
Rds On (Max) @ Id, Vgs:
18mOhm @ 75A, 18V
Detailed Description:
N-Channel 650V 142A (Tc) 500W (Tc) Through Hole TO-247-4L
Input Capacitance (Ciss) (Max) @ Vds:
4790pF @ 325V
Drive Voltage (Max Rds On, Min Rds On):
15V, 18V
Mounting Type:
Through Hole
Vgs(th) (Max) @ Id:
4.3V @ 25mA
Drain to Source Voltage (Vdss):
650V
Vgs (Max):
+22V, -8V
Gate Charge (Qg) (Max) @ Vgs:
283nC @ 18V
Supplier Device Package:
TO-247-4L
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-247-4
Power Dissipation (Max):
500W (Tc)
Current - Continuous Drain (Id) @ 25°C:
142A (Tc)
Technology:
SiCFET (Silicon Carbide)
Manufacturer:
ON Semiconductor
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Yes. We ship NTH4L015N065SC1 Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is NTH4L015N065SC1. It has a maximum of 650 v drain source voltage. While 142 a of maximum continuous drain current. The product is available in through hole configuration. The product sic power, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4.3v of maximum gate threshold voltage. It provides up to 0.012 ω maximum drain source resistance. The package is a sort of to-247. It consists of 1 elements per chip. The transistor is manufactured from highly durable sic material. It contains 4 pins. It has typical 14 weeks of manufacturer standard lead time. It has a maximum Rds On and voltage of 18mohm @ 75a, 18v. It features n-channel 650v 142a (tc) 500w (tc) through hole to-247-4l. The product's input capacitance at maximum includes 4790pf @ 325v. The drive voltage (maximum and minimum Rds On) of the product includes 15v, 18v. The typical Vgs (th) (max) of the product is 4.3v @ 25ma. The product has a 650v drain to source voltage. The maximum Vgs rate is +22v, -8v. The maximum gate charge and given voltages include 283nc @ 18v. to-247-4l is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 175°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-247-4. The product carries maximum power dissipation 500w (tc). The continuous current drain at 25°C is 142a (tc). This product use sicfet (silicon carbide) technology. The on semiconductor's product offers user-desired applications.
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