Maximum Drain Source Voltage:
650 V
Maximum Continuous Drain Current:
62 A
Mounting Type:
Surface Mount
Series:
SiC Power
Channel Type:
N
Maximum Gate Threshold Voltage:
4.3V
Maximum Drain Source Resistance:
0.05 Ω
Package Type:
D2PAK-7L
Number of Elements per Chip:
1
Transistor Material:
SiC
Pin Count:
7
Manufacturer Standard Lead Time:
21 Weeks
Rds On (Max) @ Id, Vgs:
50mOhm @ 25A, 18V
Detailed Description:
N-Channel 650V 62A (Tc) 242W (Tc) Surface Mount D2PAK-7
Input Capacitance (Ciss) (Max) @ Vds:
1890pF @ 325V
Drive Voltage (Max Rds On, Min Rds On):
15V, 18V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
4.3V @ 8mA
Drain to Source Voltage (Vdss):
650V
Vgs (Max):
+22V, -8V
Gate Charge (Qg) (Max) @ Vgs:
105nC @ 18V
Supplier Device Package:
D2PAK-7
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Power Dissipation (Max):
242W (Tc)
Current - Continuous Drain (Id) @ 25°C:
62A (Tc)
Technology:
SiCFET (Silicon Carbide)
Manufacturer:
ON Semiconductor
