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ON Semiconductor NTMT095N65S3H

ON Semiconductor

Product Information

Maximum Drain Source Voltage:
650 V
Maximum Continuous Drain Current:
30 A
Mounting Type:
Surface Mount
Series:
SUPERFET III
Channel Type:
N
Maximum Gate Threshold Voltage:
4V
Maximum Drain Source Resistance:
0.095 Ω
Package Type:
TDFN4
Number of Elements per Chip:
1
Pin Count:
8
Rds On (Max) @ Id, Vgs:
95mOhm @ 15A, 10V
Detailed Description:
N-Channel 650V 30A (Tc) 208W (Tc) Surface Mount 4-TDFN (8x8)
Input Capacitance (Ciss) (Max) @ Vds:
2833pF @ 400V
Drive Voltage (Max Rds On, Min Rds On):
10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
4V @ 2.8mA
Series:
SuperFET® III
Vgs (Max):
±30V
Gate Charge (Qg) (Max) @ Vgs:
58nC @ 10V
Supplier Device Package:
4-TDFN (8x8)
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
4-PowerTSFN
Power Dissipation (Max):
208W (Tc)
Drain to Source Voltage (Vdss):
650V
Current - Continuous Drain (Id) @ 25°C:
30A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
RoHs Compliant
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This is manufactured by ON Semiconductor. The manufacturer part number is NTMT095N65S3H. It has a maximum of 650 v drain source voltage. While 30 a of maximum continuous drain current. The product is available in surface mount configuration. The product superfet iii, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4v of maximum gate threshold voltage. It provides up to 0.095 ω maximum drain source resistance. The package is a sort of tdfn4. It consists of 1 elements per chip. It contains 8 pins. It has a maximum Rds On and voltage of 95mohm @ 15a, 10v. It features n-channel 650v 30a (tc) 208w (tc) surface mount 4-tdfn (8x8). The product's input capacitance at maximum includes 2833pf @ 400v. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The typical Vgs (th) (max) of the product is 4v @ 2.8ma. The product superfet® iii, is a highly preferred choice for users. The maximum Vgs rate is ±30v. The maximum gate charge and given voltages include 58nc @ 10v. 4-tdfn (8x8) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in 4-powertsfn. The product carries maximum power dissipation 208w (tc). The product has a 650v drain to source voltage. The continuous current drain at 25°C is 30a (tc). This product use mosfet (metal oxide) technology. The on semiconductor's product offers user-desired applications.

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Datasheet - NTMT095N65S3H(Technical Reference)
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NTMT095N65S3H(Datasheets)

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We accept all major payment methods for all products including ET21206911. Please check your shopping cart at the time of order.
You can order ON Semiconductor brand products with NTMT095N65S3H directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of ON Semiconductor NTMT095N65S3H. You can also check on our website or by contacting our customer support team for further order details on ON Semiconductor NTMT095N65S3H.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET21206911 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "ON Semiconductor" products on our website by using Enrgtech's Unique Manufacturing Part Number ET21206911.
Yes. We ship NTMT095N65S3H Internationally to many countries around the world.