Maximum Drain Source Voltage:
100 V
Maximum Continuous Drain Current:
110 A
Mounting Type:
Surface Mount
Channel Type:
N
Maximum Gate Threshold Voltage:
4V
Maximum Drain Source Resistance:
0.0076 Ω
Package Type:
PQFN
Number of Elements per Chip:
1
Pin Count:
8
Rds On (Max) @ Id, Vgs:
7.6mOhm @ 48A, 10V
Detailed Description:
N-Channel 100V 14A (Ta), 110A (Tc) 3W (Ta), 187W (Tc) Surface Mount 8-PQFN (5x6)
Input Capacitance (Ciss) (Max) @ Vds:
6180pF @ 50V
Drive Voltage (Max Rds On, Min Rds On):
10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
4V @ 254µA
Drain to Source Voltage (Vdss):
100V
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
92nC @ 10V
Supplier Device Package:
8-PQFN (5x6)
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
8-PowerTDFN
Power Dissipation (Max):
3W (Ta), 187W (Tc)
Current - Continuous Drain (Id) @ 25°C:
14A (Ta), 110A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
This is manufactured by ON Semiconductor. The manufacturer part number is NTMFS7D8N10GTWG. It has a maximum of 100 v drain source voltage. While 110 a of maximum continuous drain current. The product is available in surface mount configuration. The product is available in [Cannel Type] channel. The product carries 4v of maximum gate threshold voltage. It provides up to 0.0076 ω maximum drain source resistance. The package is a sort of pqfn. It consists of 1 elements per chip. It contains 8 pins. It has a maximum Rds On and voltage of 7.6mohm @ 48a, 10v. It features n-channel 100v 14a (ta), 110a (tc) 3w (ta), 187w (tc) surface mount 8-pqfn (5x6). The product's input capacitance at maximum includes 6180pf @ 50v. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The typical Vgs (th) (max) of the product is 4v @ 254µa. The product has a 100v drain to source voltage. The maximum Vgs rate is ±20v. The maximum gate charge and given voltages include 92nc @ 10v. 8-pqfn (5x6) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 175°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in 8-powertdfn. The product carries maximum power dissipation 3w (ta), 187w (tc). The continuous current drain at 25°C is 14a (ta), 110a (tc). This product use mosfet (metal oxide) technology. The on semiconductor's product offers user-desired applications.
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