ON Semiconductor NTMFS002P03P8ZT1G
Product Information
Maximum Drain Source Voltage:
30 V
Maximum Continuous Drain Current:
263 A
Mounting Type:
Surface Mount
Channel Type:
P
Maximum Gate Threshold Voltage:
3V
Maximum Drain Source Resistance:
0.0014 Ω
Package Type:
SO
Number of Elements per Chip:
1
Pin Count:
8
Manufacturer Standard Lead Time:
52 Weeks
Rds On (Max) @ Id, Vgs:
1.4mOhm @ 23A, 10V
Detailed Description:
P-Channel 30V 40.2A (Ta), 263A (Tc) 3.3W (Ta), 138.9W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
Input Capacitance (Ciss) (Max) @ Vds:
14950pF @ 15V
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
3V @ 250µA
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±25V
Gate Charge (Qg) (Max) @ Vgs:
217nC @ 4.5V
Supplier Device Package:
5-DFN (5x6) (8-SOFL)
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
P-Channel
Customer Reference:
Package / Case:
8-PowerTDFN, 5 Leads
Power Dissipation (Max):
3.3W (Ta), 138.9W (Tc)
Current - Continuous Drain (Id) @ 25°C:
40.2A (Ta), 263A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
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Yes. We ship NTMFS002P03P8ZT1G Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is NTMFS002P03P8ZT1G. It has a maximum of 30 v drain source voltage. While 263 a of maximum continuous drain current. The product is available in surface mount configuration. The product is available in [Cannel Type] channel. The product carries 3v of maximum gate threshold voltage. It provides up to 0.0014 ω maximum drain source resistance. The package is a sort of so. It consists of 1 elements per chip. It contains 8 pins. It has typical 52 weeks of manufacturer standard lead time. It has a maximum Rds On and voltage of 1.4mohm @ 23a, 10v. It features p-channel 30v 40.2a (ta), 263a (tc) 3.3w (ta), 138.9w (tc) surface mount 5-dfn (5x6) (8-sofl). The product's input capacitance at maximum includes 14950pf @ 15v. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The typical Vgs (th) (max) of the product is 3v @ 250µa. The product has a 30v drain to source voltage. The maximum Vgs rate is ±25v. The maximum gate charge and given voltages include 217nc @ 4.5v. 5-dfn (5x6) (8-sofl) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type p-channel. Moreover, the product comes in 8-powertdfn, 5 leads. The product carries maximum power dissipation 3.3w (ta), 138.9w (tc). The continuous current drain at 25°C is 40.2a (ta), 263a (tc). This product use mosfet (metal oxide) technology. The on semiconductor's product offers user-desired applications.
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